Compositions for forming nitrogen-containing films and methods for manufacturing semiconductor substrates

Abstract

This invention provides a nitrogen-containing film forming composition capable of forming a nitrogen-containing film with excellent heat resistance and embeddability, and a method for manufacturing a semiconductor substrate. A nitrogen-containing film forming composition contains a nitrogen-containing compound and a solvent, wherein the nitrogen-containing compound is a compound represented by formula (A0) or formula (A1), or a polymer having repeating units represented by formula (A2) or formula (A3). [Chemical 1] (where X is independently -O-, -S-, or -NR'-; R' is a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms; Ra and Rb are independently monovalent organic groups having 1 to 40 carbon atoms; Ar1 ​​is independently a substituted or unsubstituted aromatic ring having 3 to 40 carbon atoms).

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