CMP slurry composition for polishing copper layer and method for polishing copper layer using the same

TW202639772AInactive Publication Date: 2026-10-01SAMSUNG SDI CO LTD
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Patent Information

Application Number
TW115106956
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-20
Filing Date
2026-02-26
Publication Date
2026-10-01
Estimated Expiration
Not applicable · inactive patent
Patent Text Reader

Abstract

Disclosed herein are a CMP slurry composition for polishing a copper layer, and a method of polishing a copper layer using the CMP slurry composition. The CMP slurry composition includes at least one solvent from a polar solvent and a nonpolar solvent, an abrasive agent, and a corrosion inhibitor. The corrosion inhibitor includes a mixture of a first corrosion inhibitor and a second corrosion inhibitor. The first corrosion inhibitor includes a triazole based compound. The second corrosion inhibitor includes a pyrazine based or triazine based compound, substituted with at least one substituted or unsubstituted amino group or at least one substituted or unsubstituted aminoalkyl group.
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