Etching composition, etching method, and method for manufacturing semiconductor substrate

Abstract

The present invention provides an etching composition, an etching method, and a method for manufacturing a semiconductor substrate. The etching composition contains (A) an oxidant, (B) a compound or salt thereof capable of releasing fluoride ions, (C) at least one amine compound selected from the group consisting of amine compounds (c1), (c2), (c3), piperazine, 1,5,9-triazacyclododecane, 1,4,7-triazacyclononane, tetraazacyclododecane, tetraazacyclotetradecane, tetraethylpentamine, and polyethylimide and their derivatives, and (D) an etching inhibitor.