Substrate layer for solder layer formation and sputtering target for forming substrate layer for solder layer formation
TW202639900APending Publication Date: 2026-10-01PROTERIAL LTD
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Patent Information
- Application Number
- TW115109291
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-03-19
- Filing Date
- 2026-03-12
- Publication Date
- 2026-10-01
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Abstract
This invention provides a solder layer base for forming a solder layer with excellent solder bonding strength, and a sputtering target for forming the solder layer base. The solder layer base has an atomic ratio represented by the formula Ni100-xyz-Cux-Moy-Mz, 30≤x≤50, 0≤y≤10, 0≤z≤25, 5≤y+z≤30, where M is one or more elements selected from Ti, Mn, and W, and the remaining portion contains unavoidable impurities. In the sputtering target, the preferred composition is 30≤x≤50, 1≤y≤10, 5≤z≤20, x+y+z≥50, more preferably 30≤x≤45, 5≤y≤8, 10≤z≤20, x+y+z≥50.
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