Film forming apparatus and film forming method

Abstract

This invention provides a technique for achieving uniformity of films formed on a substrate. The film-forming apparatus of this invention includes: a chamber; a substrate support portion disposed within the chamber and including a substrate support surface; a processing gas supply portion configured to supply processing gas toward the substrate support surface; a target disposed above the substrate support surface of the substrate support portion, with the target surface arranged along the flow direction of the processing gas, configured to release sputtered particles from the target surface by ions in plasma generated from the processing gas; a rectifying gas supply portion configured to supply rectifying gas into the chamber to rectify the processing gas passing through the target surface toward the substrate support surface; a rotating portion configured to rotate the substrate support portion; and a lifting portion configured to lift the substrate support surface of the substrate support portion to adjust the distance between the target and the substrate support surface.

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