Processing methods, manufacturing methods of semiconductor devices, programs and processing devices

TW202639906APending Publication Date: 2026-10-01KOKUSAI DENKI KK
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Patent Information

Application Number
TW115101349
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-09-25
Filing Date
2026-01-14
Publication Date
2026-10-01

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    Figure TWG2TA001079027_003
Patent Text Reader

Abstract

The present invention comprises: a) supplying a first gas containing a first element and a first halogen to a component having an oxide film to remove at least a portion of the oxide film; b) supplying an oxygen-containing gas to the component; c) supplying a second gas containing a second halogen to the component in an oxygen-free gas environment; and d) performing steps a), b), and c) in sequence.
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