Method of manufacturing hexagonal / amorphous boron nitride composite film

Abstract

A method of manufacturing a hexagonal / amorphous boron composite nitride film is performed by a plurality of atomic layer deposition cycles. Each of the at least one atomic layer deposition cycle is firstly to introduce at least one pulse of a boron-containing precursor into a reaction chamber where the device is placed. During the step of introducing the at least one pulse of the boron-containing precursor, a non-reactive gas plasma is introduced where the boron-containing precursor is activated by the non-reactive gas plasma. Next, a purge gas is selectively introduced into the reaction chamber. Then, a nitrogen-containing plasma is introduced into the reaction chamber. Finally, the purge gas is introduced into the reaction chamber.

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