Varying thickness isolation plate for use in semiconductor processing

Abstract

Embodiments of the present disclosure generally relate to a semiconductor processing chamber, and more particularly, an isolation plate having a geometry configured to improve a precursor deposition uniformity within a processing chamber, and related methods. In one or more embodiments, a substrate processing chamber includes a chamber body at least partially defining an internal volume. An upper window and a lower window are disposed within the internal volume. The upper window is at least partially defining a processing volume. A substrate support is disposed within the processing volume. An isolation plate is disposed between the substrate support and the upper window within the processing volume. The isolation plate includes a first face and a second face opposing the first face. At least one of the first face or the second face is at least partially curved.

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