Atomic layer deposition equipment and usage methods

Abstract

This invention discloses an atomic layer deposition (ALD) apparatus and its method of use. The ALD apparatus includes: a base assembly; a spray head for introducing process gas and a first purge gas into a reaction chamber; an exhaust port, disposed at the bottom or side wall of the reaction chamber, for extracting unreacted process gas from the reaction chamber; a dead zone formed in a region located at the bottom of the reaction chamber and away from the exhaust port; at least one dead zone purge pipeline, one end of which is connected to a second purge gas source, and the other end of which is connected to the reaction chamber through an inlet on the reaction chamber; the inlet is located below the wafer and on the opposite side of the exhaust port; a first pressurization device is provided on the dead zone purge pipeline for pressurizing the second purge gas to a first preset pressure; the pressurized second purge gas is introduced into the reaction chamber through the inlet.

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