Method for forming thin film, selective deposition method, and method for manufacturing electronic device using the same

TW202639923APending Publication Date: 2026-10-01JUSUNG ENG
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Patent Information

Application Number
TW114143483
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-11-07
Filing Date
2025-11-07
Publication Date
2026-10-01

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Abstract

Disclosed is a method for forming a metal film on a substrate, the method comprising a step for supplying a source gas containing a metal precursor gas onto the substrate; and a step for supplying a first plasma gas onto the substrate and forming first plasma, wherein the first plasma gas includes at least one gas selected from the group consisting of chlorine (Cl) gas and fluorine (F) gas.
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