A method for controlling the radial surface temperature distribution of components in a CVD reactor process chamber

Abstract

This invention relates to a method and apparatus for depositing a layer on a substrate in a process chamber of a CVD reactor. The method and apparatus utilize a gas inlet member for injecting different process gases into the process chamber. A process gas containing at least one first gas and one second gas is injected into at least one gas distribution volume, which is fluidly connected to outlet openings disposed in an outlet surface. The process gas flows into the process chamber through these outlet openings. The process gas is injected into the gas distribution volume at at least two different injection points with different mixing ratios of the first and second gases, such that the gas stream exiting from the outlet openings has different concentrations of the first and second gases radially relative to the center of the outlet surface. The first and second gases have different thermal conductivity characteristics. A predetermined radial surface temperature distribution of elements disposed in the heat transfer zone between heating and cooling elements is set by changing the mixing ratio of the first and second gases at the different injection points.

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