Apparatus and method for simultaneously depositing layers on a substrate

Abstract

The present invention relates to an apparatus for simultaneously depositing layers on a substrate in a first and at least one second reaction chamber, the apparatus comprising: a common waste gas treatment device for fluidly connecting the first and second reaction chambers (1, 1') to a waste gas pump (14) via a gas outlet line (12); a pressure gauge for measuring the total pressure in the first reaction chamber (1); a differential pressure gauge (10) for measuring the difference between the total pressure in the first reaction chamber (1) and the second reaction chamber (1'); at least one pressure regulating valve; and a control device for regulating the pressure by changing the valve position of the pressure regulating valve using the measurements provided by the pressure gauge (9) and the differential pressure gauge (10), wherein at least the differential pressure gauge (10) is arranged in a pressure measuring line (19, 19') connecting the two reaction chambers (1, 1') together, the pressure measuring line being different from the gas outlet lines (12, 13).

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