High ion bombardment driven advanced patterning carbon film

Abstract

Embodiments of the present invention generally relate to process systems, chambers, and methods for depositing or otherwise fabricating carbon films, such as hardmask layers with improved properties including density. In some embodiments, a plasma processing chamber contains a sensor array configured to measure radio frequency (RF) current that is transmitted via a conductor, an electrically conductive element disposed around a substrate processing region of the plasma processing chamber and electrically isolated from a substrate support of the plasma processing chamber, one or more RF current tuners, a showerhead, and a vacuum system including a pump and a gate valve. In some examples, a method of forming a carbon-containing layer includes introducing precursor gas and inert gas into the plasma processing chamber, the precursor gas is a hydrocarbon-containing gas mixture; generating an RF plasma and depositing a carbon-containing layer on the substrate.

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