Apparatus and method for plasma enhanced substrate processing

TW202639942APending Publication Date: 2026-10-01PICOSUN OY
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Patent Information

Application Number
TW115106857
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-03
Filing Date
2026-02-25
Publication Date
2026-10-01

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Abstract

This invention relates to a method and apparatus (100) for plasma-enhanced substrate processing, comprising: a precursor spray head (130) and a substrate support (110) defining a processing volume (135), wherein the substrate support (110) provides for one or more substrate locations (125) of one or more substrates (120), and wherein the precursor spray head (130) is configured to provide a flow of plasma precursor (P) to each substrate location (125); a central ejector (180) defined upstream of an ejector container in the processing volume (135). The center injector (180) includes an injector outlet (185a) for injecting non-plasma precursors (NP1, NP2) at the center from the injector volume (180v) toward the base support (110); one or more injector inlets (170) for supplying non-plasma precursors to the injector volume and configured to inject the non-plasma precursors (NP1, NP2) toward the top portion of the injector volume (180v) opposite to the injector outlet (185a) and away from the processing volume (135). A method and an apparatus (100) for plasma enhanced substrate processing, comprising a precursor showerhead (130) and a substrate support (110) to define a processing volume (135) therebetween, wherein the substrate support (110) provides one or more substrate positions (125) for one or more substrates (120), and wherein the precursor showerhead (130) is configured to provide each substrate position (125) with plasma precursor (P) flow, a center injector (180) defining an injector volume (180v) upstream of the processing volume (135), the center injector (180) comprising an injector outlet (185a) to centrally inject non-plasma precursor (NP1, NP2) from the injector volume (180v) towards the center of the substrate support (110), one or more injector inlets (170) for providing non-plasma precursor to the injector volume and configured to inject the non-plasma precursor (NP1,NP2) towards the top part of the injector volume (180v) located opposite to the injector outlet (185a) and away from the processing volume (135).,
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