Semiconductor structure and semiconductor device
TW202639978APending Publication Date: 2026-10-01VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
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Patent Information
- Application Number
- TW114111785
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-03-27
- Publication Date
- 2026-10-01
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Figure TWG2TA001077926_001 
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Abstract
A semiconductor structure is provided, including a substrate, a seed layer disposed on the substrate, and a buffer layer disposed on the seed layer. The buffer layer includes a first superlattice part disposed on the seed layer, a second superlattice part disposed on the first superlattice part, and a third superlattice part disposed on the second superlattice part. The first superlattice part, the second superlattice part, and the third superlattice part respectively have a first aluminum concentration, a second aluminum concentration, and a third aluminum concentration. The second aluminum concentration is less than the first aluminum concentration and the second aluminum concentration is less than the third aluminum concentration.
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