A substrate for single-crystal diamond laminated substrates and its manufacturing method, and a method for manufacturing single-crystal diamond substrates.

TW202639981APending Publication Date: 2026-10-01SHIN ETSU CHEMICAL CO LTD
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Patent Information

Application Number
TW114143191
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-11-08
Filing Date
2025-11-06
Publication Date
2026-10-01

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Abstract

This invention relates to a substrate for use as a single-crystal diamond laminate, comprising: an initial substrate containing at least one of amorphous carbon, glassy carbon, polycrystalline diamond, and single-crystal diamond with a linear expansion coefficient less than that of single-crystal α-Al₂O₃ and greater than 0.5 × 10⁻⁶ / K; a single-crystal α-Al₂O₃ layer on the initial substrate; and a heteroepitaxial layer composed of any one of iridium film, rhodium film, and platinum film on the single-crystal α-Al₂O₃ layer. This provides a substrate capable of forming a high-quality single-crystal diamond layer with a large area (large diameter) and high crystallinity, high purity, and low stress.
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