Electro-absorption modulator and monolithic electro-photonic integrated circuit comprising an electro-absorption modulator and driver electronics

Abstract

A waveguide (WG)-device configured to modulate light and comprising a p type material, an i-type material and an n-type materials (a PIN waveguide), the waveguide device comprising: a semi-insulating (SI) indium phosphide (InP) substrate; an epitaxial layer stack formed on the SI:InP substrate structured to form the PIN waveguide, the epitaxial layer stack comprising: an n-layer structure and a p-layer structure; an i-region comprising optical material having an operational wavelength range located between the n-layer structure and the p-layer structure; the n-layer structure and the p-layer structure providing a mode-shaping functionality configured to optical confine one or more modes of an optical signal configured to propagate through the i-region; wherein the mode-shaping functionality includes providing a mode-extending functionality in at least one of the n-layer structure and the p-layer structure.

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