Memory system

Abstract

To improve data reliability, according to an embodiment, the memory system includes a memory device and a memory controller. The memory device includes: a first memory cell and a second memory cell; word lines connected to the gates of the first memory cell and the second memory cell; a first bit line and a second bit line connected to the first memory cell and the second memory cell, respectively; a sense amplifier module including a first latch circuit and a second latch circuit; and a data register. During a read operation, the first latch circuit and the second latch circuit respectively store first data corresponding to the first bit line and second data corresponding to the second bit line. The data register stores the data of the first memory cell based on the calculation result using the first data, and stores the data of the second memory cell based on the calculation result using the second data.

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