Non-volatile memory devices and their control methods

Abstract

A non-volatile memory device is provided that can perform high-speed readout operations that cancel out inter-cell interference. The control circuit uses a first voltage to simultaneously select two adjacent word lines for readout operations. These two adjacent word lines are adjacent to the target word line. The first voltage is used to determine whether the threshold voltages of the two adjacent memory cells connected to the two adjacent word lines are at or below a first state threshold voltage. Based on the result of the simultaneous selection of two adjacent word lines for readout operations, the control circuit selects one of the following data: "data read from the memory cell of the target word line using multiple first readout voltages" or "data read from the memory cell of the target word line using multiple second readout voltages, each higher than the multiple first readout voltages."

Images