Systems and methods for high performance read with future voltage threshold estimation in nvm

Abstract

The present disclosure relates to a flash memory system including a non-volatile memory and a circuit for performing operations on the non-volatile memory. The circuit may determine, by a machine learning model at a first time point, a plurality of voltage thresholds for read operations on the non-volatile memory, based on one or more stress conditions at the first time point. The plurality of voltage thresholds may correspond to respective time durations since the first time point. The circuit may obtain, from the plurality of voltage thresholds, one or more voltage thresholds associated with a particular time duration of the respective time durations. The circuit may perform, at a second time point that is later than the first time point by the particular time duration, a read operation on the non-volatile memory with the one or more voltage thresholds associated with the particular time duration.

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