Stacked capacitor packaging structure and method of manufacturing the same, and electronic device

TW202640669AActive Publication Date: 2026-10-01AIPAQ TECH CO LTD
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
TW114110429
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-03-20
Publication Date
2026-10-01
Estimated Expiration
2045-03-19

Smart Images

  • Figure TWG2TA001077627_001
    Figure TWG2TA001077627_001
  • Figure TWG2TA001077627_002
    Figure TWG2TA001077627_002
  • Figure TWG2TA001077627_003
    Figure TWG2TA001077627_003
Patent Text Reader

Abstract

The present invention provides a stacked capacitor packaging structure and a method of manufacturing the same, and an electronic device. The stacked capacitor packaging structure includes a capacitor unit, an insulating package body and a terminal electrode structure. The capacitor unit includes a plurality of capacitor elements. The insulating package body is configured to partially enclose the capacitor elements. The terminal electrode structure includes a first electrode structure layer and a second electrode structure layer. The positive electrode portions of the capacitor elements are separated from each other by a predetermined distance, and the negative electrode portions of the capacitor elements are stacked in sequence to provide a common negative electrode structure. The positive side surface of the positive electrode portion of each capacitor element is exposed by the first side portion of the insulating package body, thereby directly electrically connecting to the first electrode structure layer. The at least one negative side surface of the common negative electrode structure is exposed by the second side portion of the insulating package body, thereby directly electrically connecting to the second electrode structure layer.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] This invention relates to a capacitor packaging structure, and more particularly to a stacked capacitor packaging structure, a method for manufacturing a stacked capacitor packaging structure, and an electronic device using the stacked capacitor packaging structure. Prior Technology

[0002] In the prior art, when multiple capacitor elements of a stacked capacitor are stacked, the multiple capacitor elements need to be pre-supported on a conductive substrate, and the positive terminal of each capacitor element needs to be bent and stacked together. Therefore, the stacked capacitor of the prior art still has room for improvement. Summary of the Invention

[0003] The problem that this invention aims to improve or solve is to provide a stacked capacitor package structure, a method for manufacturing a stacked capacitor package structure, and an electronic device using the stacked capacitor package structure, in order to address the shortcomings of the prior art.

[0004] To improve or solve the above-mentioned problems, one technical means adopted by the present invention is to provide a stacked capacitor package structure, which includes: a capacitor unit, an insulating package, and an end electrode structure. The capacitor unit includes a plurality of capacitor elements stacked sequentially and electrically connected to each other. The insulating package is configured to partially cover the plurality of capacitor elements. The end electrode structure includes a first electrode structure layer for covering a first end portion of the insulating package and a second electrode structure layer for covering a second end portion of the insulating package. Each capacitor element has a positive electrode portion and a negative electrode portion. The positive electrode portions of multiple capacitor elements are separated from each other by a predetermined distance, and the negative electrode portions of multiple capacitor elements are stacked sequentially to provide a common side negative electrode structure. A positive electrode side end face of the positive electrode portion of each capacitor element is exposed by a first side end face of an insulating package, thereby being directly electrically connected to a first electrode structure layer. At least one negative electrode side end face of the common side negative electrode structure provided by the sequential stacking of multiple negative electrode portions is exposed by a second side end face of an insulating package, thereby being directly electrically connected to a second electrode structure layer.

[0005] To improve or solve the above-mentioned problems, another technical means adopted by the present invention is to provide an electronic device, which includes: a circuit board structure and a stacked capacitor package structure. The circuit board structure has at least one positive electrode pad and at least one negative electrode pad. The stacked capacitor package structure is disposed on the circuit board structure and electrically connected to the circuit board structure. The stacked capacitor package structure includes a capacitor unit, an insulating package, and an end electrode structure. The capacitor unit comprises a plurality of capacitor elements sequentially stacked and electrically connected to each other. The insulating package is configured to partially cover the plurality of capacitor elements. The end electrode structure includes a first electrode structure layer covering a first side end of the insulating package and a second electrode structure layer covering a second side end of the insulating package. Each capacitor element has a positive electrode portion and a negative electrode portion. The positive electrode portions of the plurality of capacitor elements are separated from each other by a predetermined distance, and the negative electrode portions of the plurality of capacitor elements are sequentially stacked to provide a common side negative electrode structure. A positive electrode side end face of the positive electrode portion of each capacitor element is exposed by the first side end of the insulating package, thereby being directly electrically connected to the first electrode structure layer. At least one negative electrode side end face of the common side negative electrode structure provided by the sequentially stacked negative electrode portions is exposed by the second side end of the insulating package, thereby being directly electrically connected to the second electrode structure layer.

[0006] To improve or solve the above-mentioned problems, another technical means adopted by the present invention is to provide a method for manufacturing a stacked capacitor package structure, which includes: sequentially stacking a plurality of capacitor elements, wherein each capacitor element has a positive electrode portion, a negative electrode portion, and a temporary support portion extending from the positive electrode portion, and the plurality of negative electrode portions of the plurality of capacitor elements are sequentially stacked to provide a common side negative electrode structure; forming an insulating package to partially cover the plurality of capacitor elements, wherein at least one negative electrode side end face of the common side negative electrode structure provided by the sequential stacking of the plurality of negative electrode portions is exposed by a second side end face of the insulating package, and the temporary support portion of each capacitor element is exposed from the insulating package; forming a first side electrode material on the insulating package; cutting off the temporary support portion of each capacitor element so that a positive electrode side end face of the positive electrode portion of each capacitor element is exposed by a first side end face of the insulating package; and forming a second side electrode material on the insulating package. The first side electrode material and the second side electrode material cooperate to form an end electrode structure, and the end electrode structure includes a first electrode structure layer and a second electrode structure layer; wherein the first electrode structure layer of the end electrode structure is configured to cover the first side end of the insulating package and is directly electrically connected to the positive electrode side end face of the positive electrode portion of each capacitor element; wherein the second electrode structure layer of the end electrode structure is configured to cover the second side end of the insulating package and is directly electrically connected to at least one negative electrode side end face of the common side negative electrode structure.

[0007] Furthermore, in the step of sequentially stacking multiple capacitor elements, the positive electrode portion of each capacitor element does not need to be bent and extends horizontally, and the common side negative electrode structure provided by sequentially stacking multiple negative electrode portions does not need to be supported by a conductive carrier substrate.

[0008] Furthermore, in the step of sequentially stacking multiple capacitor elements, the multiple positive electrode portions of the multiple capacitor elements are separated from each other, the multiple negative electrode portions of the multiple capacitor elements are sequentially stacked and electrically connected to each other, and the multiple temporary support portions of the multiple capacitor elements are sequentially stacked to form a support structure.

[0009] Furthermore, in the step of forming an insulating encapsulation to partially cover multiple capacitor elements, at least one negative electrode side face of the shared side negative electrode structure is completely or partially exposed by the second side end of the insulating encapsulation.

[0010] Furthermore, in the step of forming the first side electrode material on the insulating package, the first side electrode material includes a first bottom electrode portion disposed on a first portion bottom surface of the insulating package and a second bottom electrode portion disposed on a second portion bottom surface of the insulating package.

[0011] Furthermore, in the step of removing the temporary carrier portion of each capacitor element, the positive electrode side end face of the positive electrode portion of each capacitor element is completely or partially exposed by the first side end of the insulating package.

[0012] Furthermore, in the step of forming the second side electrode material on the insulating package, the first electrode structure layer includes a first side electrode portion disposed on a first side end face of the insulating package and electrically connected to the first bottom electrode portion, and a second side electrode portion disposed on a second side end face of the insulating package and electrically connected to the second bottom electrode portion.

[0013] One of the beneficial effects of the present invention is that the stacked capacitor package structure and the electronic device using the stacked capacitor package structure provided by the present invention can, through the technical solutions of "multiple positive electrode portions of multiple capacitor elements being separated from each other by a predetermined distance", "multiple negative electrode portions of multiple capacitor elements being sequentially stacked to provide a common side negative electrode structure", "a positive electrode side end face of the positive electrode portion of each capacitor element being exposed by a first side end face of an insulating package", and "at least one negative electrode side end face of the common side negative electrode structure provided by the sequential stacking of multiple negative electrode portions being exposed by a second side end face of an insulating package", enable the positive electrode side end face of the positive electrode portion of each capacitor element to be directly electrically connected to a first electrode structure layer, and the negative electrode side end face of the common side negative electrode structure provided by the sequential stacking of multiple negative electrode portions to be directly electrically connected to a second electrode structure layer. Therefore, the stacked capacitor package structure can be configured as a chip-type capacitor package structure that "does not require bending the positive electrode leads" and "does not require using a conductive carrier substrate".

[0014] One of the beneficial effects of the present invention is that the method for manufacturing a stacked capacitor package structure provided by the present invention can achieve the following: "a plurality of capacitor elements are stacked sequentially, wherein each capacitor element has a positive electrode portion, a negative electrode portion, and a temporary support portion extending from the positive electrode portion, and a plurality of negative electrode portions of the plurality of capacitor elements are stacked sequentially to provide a common side negative electrode structure"; "an insulating package is formed to partially cover the plurality of capacitor elements, wherein at least one negative electrode side end face of the common side negative electrode structure provided by the sequential stacking of the plurality of negative electrode portions is exposed by a second side end face of the insulating package, and the temporary support portion of each capacitor element is exposed from the insulating package"; "a first side electrode material is formed on the insulating package". The technical solution described includes: "removing the temporary carrier portion of each capacitor element so that a positive electrode side face of the positive electrode portion of each capacitor element is exposed by a first side end of the insulating package"; "forming a second side electrode material on the insulating package"; and "the first side electrode material and the second side electrode material cooperate to form an end electrode structure, and the end electrode structure includes a first electrode structure layer and a second electrode structure layer." This allows the first electrode structure layer of the end electrode structure to be configured for direct electrical connection to the positive electrode side face of the positive electrode portion of each capacitor element, and the second electrode structure layer to be configured for direct electrical connection to at least one negative electrode side face of the common side negative electrode structure. Therefore, the stacked capacitor package structure can be configured as a chip-type capacitor package structure that "does not require bending the positive electrode lead" and "does not require using a conductive carrier substrate."

[0015] To further understand the features and technical content of this invention, please refer to the following detailed description and drawings of this invention. However, the drawings provided are for reference and illustration only and are not intended to limit this invention. Simple Explanation of the Diagram

[0016] Figure 1 is a flowchart of the method for manufacturing the stacked capacitor package structure provided in the first embodiment of the present invention.

[0017] Figure 2 is a cross-sectional schematic diagram of the original capacitor element that has not yet been cut according to the first embodiment of the present invention.

[0018] Figure 3 is an enlarged schematic diagram of part III of Figure 2.

[0019] Figure 4 is a side cross-sectional view of step S100 of the method for manufacturing the stacked capacitor package structure provided in the first embodiment of the present invention.

[0020] Figure 5 is a top view of step S100 of the method for manufacturing the stacked capacitor package structure provided in the first embodiment of the present invention.

[0021] Figure 6 is a side cross-sectional view of steps S102 and S104 of the method for manufacturing the stacked capacitor package structure provided in the first embodiment of the present invention.

[0022] Figure 7 is a side cross-sectional view of step S106 of the method for manufacturing the stacked capacitor package structure provided in the first embodiment of the present invention.

[0023] Figure 8 is a side cross-sectional view of step S108 of the method for manufacturing the stacked capacitor package structure provided in the first embodiment of the present invention (or a side cross-sectional view of the stacked capacitor package structure provided in the first embodiment of the present invention).

[0024] Figure 9 is a side cross-sectional view of an electronic device using a stacked capacitor package structure provided in the second embodiment of the present invention.

[0025] Figure 10 is a side cross-sectional view of the stacked capacitor package structure provided in the third embodiment of the present invention. Implementation

[0026] The following specific embodiments illustrate the implementation of the "stacked capacitor package structure," "method of manufacturing the stacked capacitor package structure," and "electronic device using the stacked capacitor package structure" disclosed in this invention. Those skilled in the art can understand the advantages and effects of this invention from the content disclosed in this specification. This invention can be implemented or applied through other different specific embodiments, and various modifications and changes can be made to the details in this specification based on different viewpoints and applications without departing from the concept of this invention. Furthermore, it should be stated in advance that the drawings of this invention are for simple illustrative purposes only and are not depictions based on actual dimensions. The following embodiments will further describe the relevant technical content of this invention in detail, but the disclosed content is not intended to limit the scope of protection of this invention. In addition, the term "or" used herein may, depending on the actual situation, include any one or more combinations of the associated listed items.

[0027] [First Embodiment]

[0028] Referring to Figures 1 to 8, the first embodiment of the present invention provides a method for manufacturing a stacked capacitor package structure S, which may include at least the following steps: First, in conjunction with Figures 1, 2, and 4, a plurality of capacitor elements 10 (or wafer-type capacitor elements) are sequentially stacked, wherein each capacitor element 10 may have a positive electrode portion 10P (or anode portion), a negative electrode portion 10N (or cathode portion), and a temporary support portion 10C (or removable support portion) extending from the positive electrode portion 10P, and the plurality of negative electrode portions 10N of the plurality of capacitor elements 10 are sequentially stacked to provide a common side negative electrode structure N (step). (Step S100); Next, in conjunction with Figures 1, 4, and 6, an insulating encapsulation 2 (e.g., made of epoxy, silicone, or any insulating material) is formed to partially encapsulate a plurality of capacitor elements 10 (a plurality of capacitor elements 10 stacked in sequence can constitute a capacitor unit 1), wherein at least one negative electrode side end face 1002 of the shared side negative electrode structure N provided by a plurality of negative electrode portions 10N stacked in sequence is provided (for example, Figure 6 illustrates five negative electrode side end faces 1002 as an example, and each negative electrode side end face 1002 can be, for example, a negative electrode processed surface presenting an arc surface or a curved surface, for example, on the insulating encapsulation). After the package 2 is ground, the common side negative electrode structure N (a negative electrode processing surface exposed from the insulating package 2) is exposed by a second side end 202 of the insulating package 2, and the temporary support portion 10C of each capacitor element 10 is exposed from the insulating package 2 (step S102); then, in conjunction with Figures 1 and 6, a first side electrode material (for example, including a first bottom electrode portion 311 and a second bottom electrode portion 321) can be formed on the insulating package 2 by electroplating, coating, spraying, printing, impregnation or any conductive material forming method (step S104); next, in conjunction with Figures 1, 6 and 7, ... As shown in Figure 7, along the cutting line shown in Figure 6, the temporary support portion 10C of each capacitor element 10 is removed, so that a positive electrode side end face 1001 (e.g., a flat positive electrode cut surface) of the positive electrode portion 10P of each capacitor element 10 is exposed by a first side end 201 of the insulating package 2 (step S106); then, in conjunction with Figures 1, 7 and 8, a second side electrode material (e.g., including a first side electrode portion 312 and a second side electrode portion 322) can be formed on the insulating package 2 by electroplating, coating, spraying, printing, impregnation or any conductive material forming method (step S108). It is worth noting that, as shown in Figure 8, the first side electrode material and the second side electrode material can cooperate with each other to form an end electrode structure 3, and the end electrode structure 3 can include a first electrode structure layer 31 and a second electrode structure layer 32.Furthermore, the first electrode structure layer 31 of the end electrode structure 3 can be configured to cover the first side end 201 of the insulating package 2 and be directly electrically connected to the positive electrode side end face 1001 of the positive electrode portion 10P of each capacitor element 10, and the second electrode structure layer 32 of the end electrode structure 3 can be configured to cover the second side end 202 of the insulating package 2 and be directly electrically connected to at least one negative electrode side end face 1002 of the common side negative electrode structure N. However, the examples given above are merely one possible embodiment and are not intended to limit the present invention.

[0029] For example, as shown in FIG4, in step S100, where multiple capacitor elements 10 are stacked sequentially, the positive electrode portion 10P of each capacitor element 10 does not need to be bent and extends horizontally (or nearly horizontally), and the common side negative electrode structure N provided by the sequential stacking of multiple negative electrode portions 10N does not need to be supported by any conductive carrier substrate (that is, only multiple capacitor elements 10 are stacked sequentially and electrically connected to each other). Furthermore, as shown in FIG4, in step S100, where multiple capacitor elements 10 are stacked sequentially, the multiple positive electrode portions 10P of the multiple capacitor elements 10 can be separated from each other, and the multiple negative electrode portions 10N of the multiple capacitor elements 10 can be stacked sequentially and electrically connected to each other. It is worth noting that, in conjunction with Figures 4 and 5, in step S100, where multiple capacitor elements 10 are sequentially stacked, multiple rear portions of the multiple temporary support portions 10C of the multiple capacitor elements 10 can be sequentially stacked to form a support structure (however, as shown in Figure 4, multiple front portions of the multiple temporary support portions 10C near the multiple positive electrode portions 10P can be separated from each other), and the support structure can be configured to simultaneously support multiple capacitor units 1 (each capacitor unit 1 may include multiple capacitor elements 10). However, the examples given above are merely one possible embodiment and are not intended to limit the present invention.

[0030] For example, as shown in FIG6, in step S102 of forming the insulating package 2 to partially cover the plurality of capacitor elements 10, at least one negative electrode side end face 1002 of the common side negative electrode structure N can be completely or partially exposed by the second side end face 202 of the insulating package 2 (for example, FIG6 shows that the five negative electrode side end faces 1002 of the common side negative electrode structure N can be partially exposed by the second side end face 202 of the insulating package 2 and are flush with each other with a second side end face 2020 of the insulating package 2). Furthermore, as shown in FIG6, in step S104 of forming the first side electrode material on the insulating package 2, the first side electrode material may include a first bottom electrode portion 311 disposed on a first portion bottom surface of the insulating package 2 and a second bottom electrode portion 321 disposed on a second portion bottom surface of the insulating package 2. Furthermore, as shown in FIG7, in step S106 of cutting off the temporary support portion 10C of each capacitor element 10, the positive electrode side end face 1001 (e.g., a flat positive electrode cut surface) of the positive electrode portion 10P of each capacitor element 10 can be completely or partially exposed by the first side end face 201 of the insulating package 2 and flush with the first side end face 2010 of the insulating package 2. Additionally, as shown in FIG8, in step S108 of forming the second side electrode material on the insulating package 2, the first electrode structure layer 31 may include a first side electrode portion 312 disposed on the first side end face 2010 of the insulating package 2 and electrically connected to the first bottom electrode portion 311, and a second side electrode portion 322 disposed on the second side end face 2020 of the insulating package 2 and electrically connected to the second bottom electrode portion 321. However, the examples given above are merely one possible embodiment and are not intended to limit the present invention.

[0031] Furthermore, in conjunction with Figures 1 to 8, through the method for manufacturing a stacked capacitor package structure S provided in the first embodiment of the present invention, the first embodiment of the present invention can further provide a stacked capacitor package structure S, which may at least include: a capacitor unit 1 (or a capacitor assembly), an insulating package 2, and an end electrode structure 3. More specifically, the capacitor unit 1 may include a plurality of capacitor elements 10 sequentially stacked and electrically connected to each other, wherein each capacitor element 10 may have a positive electrode portion 10P and a negative electrode portion 10N. The plurality of positive electrode portions 10P of the plurality of capacitor elements 10 may be separated from each other by a predetermined distance, and the plurality of negative electrode portions 10N of the plurality of capacitor elements 10 may be sequentially stacked to provide a common side negative electrode structure N. Additionally, the insulating package 2 may be configured to partially cover the plurality of capacitor elements 10, and the end electrode structure 3 may include a first electrode structure layer 31 for covering a first side end portion 201 of the insulating package 2 and a second electrode structure layer 32 for covering a second side end portion 202 of the insulating package 2.

[0032] For example, as shown in Figures 2, 3 and 8, each capacitor element 10 may include a metal foil 101 (e.g., aluminum foil, copper foil or any kind of conductive foil), an oxide layer 102 formed on the metal foil 101, a surrounding insulating layer 103 disposed around the oxide layer 102, a conductive polymer layer 104 for connecting the surrounding insulating layer 103 and partially covering the oxide layer 102, and a conductive adhesive structure layer for connecting the surrounding insulating layer 103 and completely covering the conductive polymer layer 104. The metal foil 101 may have a porous corrosion structure 1010 covered by the oxide layer 102. Additionally, the conductive adhesive structure layer may include a carbon adhesive layer 105 for completely covering the conductive polymer layer 104 and a silver adhesive layer 106 for completely covering the carbon adhesive layer 105. Furthermore, the length L1 (or the length along the extension direction of the metal foil 101) of the positive electrode portion 10P of the capacitor element 10 is less than the length L2 (or the length along the extension direction of the metal foil 101) surrounding the insulating layer 103. It is noteworthy that the positive electrode portion 10P of each capacitor element 10 can be configured as a horizontally extending (or nearly horizontally extending) positive conductive pin portion without bending, and the common side negative electrode structure N provided by sequentially stacking multiple negative electrode portions 10N can be configured as a negative conductive common portion that does not need to be supported by any conductive carrier substrate (e.g., as shown in Figures 4 and 8). However, the examples described above are merely one possible embodiment and are not intended to limit the invention.

[0033] For example, as shown in Figures 2, 4 and 8, the positive electrode side end face 1001 of the positive electrode portion 10P of each capacitor element 10 can be completely or partially exposed by the first side end face 201 of the insulating package 2 (that is, the positive electrode side end face 1001 of the positive electrode portion 10P of each capacitor element 10 is not completely covered by the insulating package 2), thereby allowing the positive electrode side end face 1001 of the positive electrode portion 10P of each capacitor element 10 to be directly electrically connected to the first electrode structure layer 31. Furthermore, at least one negative electrode side face 1002 (or multiple negative electrode side face 1002) of the common side negative electrode structure N provided by sequentially stacking multiple negative electrode portions 10N can be completely or partially exposed by the second side end 202 of the insulating package 2 (that is, at least one or multiple negative electrode side face 1002 of the common side negative electrode structure N provided by sequentially stacking multiple negative electrode portions 10N will not be completely covered by the insulating package 2), thereby enabling at least one negative electrode side face 1002 (or multiple negative electrode side face 1002) of the common side negative electrode structure N to be directly electrically connected to the second electrode structure layer 32. In other words, the positive electrode side face 1001 of the positive electrode portion 10P of each capacitor element 10 can be exposed from a first side face 2010 of the first side end 201 of the insulating package 2, so that the first electrode structure layer 31 can be configured for direct electrical contact with the positive electrode side face 1001 of the positive electrode portion 10P of each capacitor element 10. Additionally, at least one negative electrode side face 1002 of the shared side negative electrode structure N provided by a plurality of negative electrode portions 10N stacked sequentially can be exposed from a second side face 2020 of the second side end 202 of the insulating package 2, so that the second electrode structure layer 32 can be configured for direct electrical contact with at least one negative electrode side face 1002 (or multiple negative electrode side faces 1002) of the shared side negative electrode structure N. However, the examples given above are merely one possible embodiment and are not intended to limit the present invention.

[0034] For example, as shown in Figures 2, 6, and 8, the top end of the uppermost capacitor element 10 only contacts the insulating package 2, and the bottom end of the lowermost capacitor element 10 only contacts the insulating package 2. Furthermore, the insulating package 2 may have a top packaging portion 203 located between the top end of the uppermost capacitor element 10 and an upper surface of the insulating package 2, and a bottom packaging portion 204 located between the bottom end of the lowermost capacitor element 10 and a lower surface of the insulating package 2. It is worth noting that the minimum thickness H1 (or maximum thickness, or average thickness) of the top encapsulation portion 203 and the minimum thickness H2 (or maximum thickness, or average thickness) of the bottom encapsulation portion 204 are both smaller than the maximum thickness H3 (or minimum thickness, or average thickness) of each capacitor element 10, and the volume occupied by the top encapsulation portion 203 and the volume occupied by the bottom encapsulation portion 204 of the insulating encapsulation body 2 are both smaller than the volume occupied by each capacitor element 10. However, the examples given above are merely one possible embodiment and are not intended to limit the present invention.

[0035] For example, as shown in Figures 6, 7, and 8, the first electrode structure layer 31 may include a first bottom electrode portion 311 and a first side electrode portion 312. The first bottom electrode portion 311 may be disposed on a first portion of the bottom surface of the insulating package 2, and the first side electrode portion 312 may be disposed on a first side end face 2010 of the insulating package 2 and electrically connected to the first bottom electrode portion 311. Similarly, the second electrode structure layer 32 may include a second bottom electrode portion 321 and a second side electrode portion 322. The second bottom electrode portion 321 may be disposed on a second portion of the bottom surface of the insulating package 2, and the second side electrode portion 322 may be disposed on a second side end face 2020 of the insulating package 2 and electrically connected to the second bottom electrode portion 321. It is worth noting that the positive electrode side face 1001 of the positive electrode portion 10P of each capacitor element 10 can directly contact the first side electrode portion 312 of the first electrode structure layer 31 and is separated from the first bottom electrode portion 311 of the first electrode structure layer 31. Furthermore, at least one negative electrode side face 1002 (or multiple negative electrode side faces 1002) of the shared side negative electrode structure N provided by the sequentially stacked multiple negative electrode portions 10N can directly contact the second side electrode portion 322 of the second electrode structure layer 32 and is separated from the second bottom electrode portion 321 of the second electrode structure layer 32. However, the examples given above are merely one feasible embodiment and are not intended to limit the present invention.

[0036] Therefore, as shown in FIG8, the stacked capacitor package structure S provided in the first embodiment of the present invention can be configured as a chip-type capacitor package structure that "does not require bending of the positive electrode pins" and "does not require the use of a conductive carrier substrate (e.g., lead frame)". That is, since the multiple positive electrode portions 10P of the multiple capacitor elements 10 can directly electrically contact the first side electrode portion 312 of the first electrode structure layer 31, and the multiple negative electrode portions 10N of the multiple capacitor elements 10 (or the shared side negative electrode structure N) can directly electrically contact the second side electrode portion 322 of the second electrode structure layer 32, the stacked capacitor package structure S provided in the first embodiment of the present invention can achieve the benefits of reducing volume (or reducing thickness and length), increasing capacitance (that is, increasing the number of stacked layers of multiple capacitor elements 10), reducing impedance (that is, reducing the positive electrode conductive path and the negative electrode conductive path), and reducing manufacturing cost (that is, not requiring bending and stacking of positive electrode pins, and not requiring the use of a conductive carrier substrate).

[0037] [Second Embodiment]

[0038] Referring to Figure 9, a second embodiment of the present invention provides an electronic device E (or an electronic carrier module, or an electronic component module), which may include: a circuit board structure P and a stacked capacitor package structure S provided by the first embodiment. A comparison of Figures 9 and 8 shows that the main difference between the second embodiment and the first embodiment is that in the second embodiment, the circuit board structure P may have at least one positive electrode pad P101 and at least one negative electrode pad P102, and the stacked capacitor package structure S provided by the first embodiment may be disposed (or fixed) on and electrically connected to the circuit board structure P through a conductive material. It is worth noting that the electronic device E may be a desktop computer, a laptop computer, a tablet computer, or any type of electronic device, and the circuit board structure P of the electronic device E may be configured to carry any type of electronic component, such as a control chip, a memory chip, an inductor, a resistor, or any type of semiconductor chip. However, the examples given above are merely one possible embodiment and are not intended to limit the present invention.

[0039] [Third Embodiment]

[0040] Referring to Figure 10, the third embodiment of the present invention provides a stacked capacitor package structure S, which may include at least: a capacitor unit 1, an insulating package 2, and an end electrode structure 3. A comparison of Figures 10 and 8 shows that the most significant difference between the third embodiment and the first embodiment is that, in the third embodiment, the common side negative electrode structure N provided by the sequential stacking of multiple negative electrode portions 10N can be configured as a thickened conductive adhesive structure (or a single-layer conductive adhesive structure) or a composite conductive adhesive structure (or a multi-layer conductive adhesive structure).

[0041] For example, as shown in FIG10, when the common side negative electrode structure N can be configured as a composite conductive adhesive structure, the common side negative electrode structure N may include a negative electrode base portion N1 formed by sequentially connecting multiple silver paste layers 106 (as shown in FIG2) through multiple capacitor elements 10 (or a first conductive adhesive layer for connecting the multiple silver paste layers 106 of the multiple capacitor elements 10, which may use the same or different conductive material as the silver paste layers 106) and a negative electrode thickening portion N2 disposed on the negative electrode base portion N1 (or a second conductive adhesive layer for connecting or covering the first conductive adhesive layer, which may use the same or different conductive material as the silver paste layers 106), and at least one negative electrode side end face 1002 may be provided by the negative electrode thickening portion N2. It is worth noting that the negative electrode thickening portion N2 may gradually shrink towards the direction of the second electrode structure layer 32, so that the common side negative electrode structure N may present a tapered shape. However, the above-described example is only one possible embodiment and is not intended to limit the present invention.

[0042] For example, when the common side negative electrode structure N can be configured as a thickened conductive adhesive structure, the common side negative electrode structure N can be formed by sequentially connecting multiple silver paste layers 106 of multiple capacitor elements 10 (as shown in FIG. 2). That is, the common side negative electrode structure N can be a negative electrode base portion N1 formed by sequentially connecting multiple silver paste layers 106 of multiple capacitor elements 10 (or a first conductive adhesive layer for connecting multiple silver paste layers 106 of multiple capacitor elements 10, which can use the same or different conductive material as the silver paste layers 106), and the common side negative electrode structure N may not need to use a negative electrode thickening portion N2 provided on the negative electrode base portion N1, so at least one negative electrode side surface 1002 can be provided by the negative electrode base portion N1. It is worth noting that the common side negative electrode structure N (that is, the negative electrode base portion N1) can gradually shrink towards the direction of the second electrode structure layer 32, so that the common side negative electrode structure N can present a tapered shape. However, the examples given above are merely one possible embodiment and are not intended to limit the invention.

[0043] [Beneficial Effects of the Examples]

[0044] One of the beneficial effects of the present invention is that the stacked capacitor package structure S and the electronic device E using the stacked capacitor package structure S provided by the present invention can provide a common side negative electrode structure N by "separating a plurality of positive electrode portions 10P of a plurality of capacitor elements 10 from each other by a predetermined distance", "arranging a plurality of negative electrode portions 10N of a plurality of capacitor elements 10 in sequence", and "exposing a positive electrode side end face 1001 of the positive electrode portion 10P of each capacitor element 10 by the first side end face 201 of the insulating package 2". The technical solution described above, which involves "at least one negative electrode side face 1002 of a common side negative electrode structure N provided by a plurality of negative electrode portions 10N stacked sequentially being exposed by the second side end 202 of the insulating package 2," allows the positive electrode side face 1001 of the positive electrode portion 10P of each capacitor element 10 to be directly electrically connected to the first electrode structure layer 31, and the negative electrode side face 1002 of the common side negative electrode structure N provided by a plurality of negative electrode portions 10N stacked sequentially to be directly electrically connected to the second electrode structure layer 32. In this way, the stacked capacitor package structure S can be configured as a chip-type capacitor package structure that "does not require bending the positive electrode leads" and "does not require using a conductive carrier substrate."

[0045] One of the beneficial effects of the present invention is that the method for manufacturing a stacked capacitor package structure S provided by the present invention can achieve the following by "sequentially stacking a plurality of capacitor elements 10, wherein each capacitor element 10 may have a positive electrode portion 10P, a negative electrode portion 10N, and a temporary support portion 10C extending from the positive electrode portion 10P, and the plurality of negative electrode portions 10N of the plurality of capacitor elements 10 sequentially stacked to provide a common side negative electrode structure N", "forming an insulating package 2 to partially cover the plurality of capacitor elements 10, wherein at least one negative electrode side end face 1002 of the common side negative electrode structure N provided by the sequentially stacked negative electrode portions 10N is exposed by a second side end 202 of the insulating package 2, and the temporary support portion 10C of each capacitor element 10 is exposed from the insulating package 2", and "forming a first side electrode material in the insulating package". The technical solutions described are as follows: "On the package 2", "Remove the temporary support portion 10C of each capacitor element 10 so that a positive electrode side end face 1001 of the positive electrode portion 10P of each capacitor element 10 is exposed by a first side end face 201 of the insulating package 2", "Form a second side end electrode material on the insulating package 2", and "The first side end electrode material and the second side end electrode material cooperate with each other to form an end electrode structure 3, and the end electrode structure 3 may include a first electrode structure layer 31 and a second electrode structure layer 32". This allows the first electrode structure layer 31 of the end electrode structure 3 to be configured for direct electrical connection to the positive electrode side end face 1001 of the positive electrode portion 10P of each capacitor element 10, and the second electrode structure layer 32 of the end electrode structure 3 to be configured for direct electrical connection to at least one negative electrode side end face 1002 of the common side negative electrode structure N. In this way, the stacked capacitor package structure S can be configured as a chip capacitor package structure that "does not require bending the positive lead" and "does not require using a conductive carrier substrate".

[0046] The content disclosed above is only a preferred and feasible embodiment of the present invention, and is not intended to limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made using the contents of the present invention specification and drawings are included in the scope of the patent application of the present invention.

[0047] E: Electronic devices P: Circuit board structure P101: Positive electrode pad P102: Negative electrode pad S: Stacked capacitor package structure 1: Capacitor Unit 10: Capacitor element 101: Metal foil 1010: Porous corrosion structure 102: Oxide layer 103: Surrounding insulation layer 104: Conductive polymer layer 105: Carbon adhesive layer 106: Silver paste layer 1001: Positive electrode side end face 1002: Negative electrode side end face 10P: Positive electrode section 10N: Negative electrode section N: Shared side negative electrode structure N1: Negative electrode base part N2: Thickened portion of the negative electrode 2: Insulating Encapsulation 201: First side end 2010: First side end face 202: Second side end 2020: Second side end face 203: Top Package 204: Bottom end packaging section 3: End electrode structure 31: First electrode structure layer 311: First bottom electrode section 312: First side electrode section 32: Second electrode structure layer 321: Second bottom electrode section 322: Second side electrode section L1, L2: Length H1, H2: Minimum thickness H3: Maximum thickness

Claims

1. A stacked capacitor package structure, comprising: A capacitor unit, the capacitor unit comprising a plurality of capacitor elements arranged in sequence and electrically connected to each other; An insulating package, the insulating package being configured to partially cover a plurality of said capacitor elements; The device includes an end electrode structure comprising a first electrode structure layer for covering a first side end of the insulating package and a second electrode structure layer for covering a second side end of the insulating package; wherein each capacitor element has a positive electrode portion and a negative electrode portion, the positive electrode portions of a plurality of capacitor elements are separated from each other by a predetermined distance, and the negative electrode portions of a plurality of capacitor elements are sequentially stacked to provide a common side end negative electrode structure; wherein a positive electrode side end face of the positive electrode portion of each capacitor element is exposed by the first side end of the insulating package, thereby being directly electrically connected to the first electrode structure layer; and wherein at least one negative electrode side end face of the common side end negative electrode structure provided by the sequentially stacked negative electrode portions is exposed by the second side end of the insulating package, thereby being directly electrically connected to the second electrode structure layer; wherein the positive electrode side end face of the positive electrode portion of each capacitor element is exposed from a first side end face of the first side end of the insulating package and is flush with the first side end face. The common side negative electrode structure, provided by sequentially stacking multiple negative electrode portions, is configured as a thickened conductive adhesive structure.

2. The stacked capacitor package structure as described in claim 1, wherein, Each capacitor element includes a metal foil, an oxide layer formed on the metal foil, a surrounding insulating layer disposed on the oxide layer, a conductive polymer layer for connecting the surrounding insulating layer and partially covering the oxide layer, and a conductive adhesive structure layer for connecting the surrounding insulating layer and completely covering the conductive polymer layer. The metal foil has a porous corrosion structure covered by the oxide layer. The conductive adhesive structure layer includes a carbon adhesive layer for completely covering the conductive polymer layer and a silver adhesive layer for completely covering the carbon adhesive layer. The length of the positive electrode portion of the capacitor element is less than the length of the surrounding insulating layer. The positive electrode side face of the positive electrode portion of each capacitor element and at least one negative electrode side face of the common side negative electrode structure provided by sequentially stacking a plurality of negative electrode portions are not completely covered by the insulating encapsulation. In this configuration, the positive electrode portion of each capacitor element is configured as a horizontally extending positive conductive lead portion that does not require bending, and the common side negative electrode structure provided by sequentially stacking a plurality of negative electrode portions is configured as a common negative conductive portion that does not require support by a conductive carrier substrate; wherein the common side negative electrode structure gradually decreases in size towards the second electrode structure layer; wherein the positive electrode side end face of the positive electrode portion of each capacitor element is completely or partially exposed by the first side end face of the insulating package, and at least one negative electrode side end face of the common side negative electrode structure provided by sequentially stacking a plurality of negative electrode portions is completely or partially exposed by the second side end face of the insulating package; The first electrode structure layer is configured to directly electrically contact the positive electrode side face of the positive electrode portion of each capacitor element; and at least one negative electrode side face of the common side negative electrode structure provided by the sequential stacking of a plurality of negative electrode portions is exposed from a second side face of the second side end of the insulating package and is flush with the second side face, such that the second electrode structure layer is configured to directly electrically contact the at least one negative electrode side face of the common side negative electrode structure.

3. The stacked capacitor package structure as described in claim 1, wherein, The top end of the uppermost capacitor element only contacts the insulating package, and the bottom end of the lowermost capacitor element only contacts the insulating package; wherein, the insulating package has a top package portion between the top end of the uppermost capacitor element and an upper surface of the insulating package, and the insulating package has a bottom package portion between the bottom end of the lowermost capacitor element and a lower surface of the insulating package; wherein, the minimum thickness of the top package portion and the minimum thickness of the bottom package portion are both less than the maximum thickness of each capacitor element, and the volume occupied by the top package portion and the volume occupied by the bottom package portion of the insulating package are both less than the volume occupied by each capacitor element; wherein, the first electrode structure layer includes a first bottom electrode portion disposed on a first portion of the bottom surface of the insulating package and a first side electrode portion disposed on the first side surface of the insulating package and electrically connected to the first bottom electrode portion; The second electrode structure layer includes a second bottom electrode portion disposed on a second portion of the bottom surface of the insulating package and a second side electrode portion disposed on a second side surface of the insulating package and electrically connected to the second bottom electrode portion; wherein the positive electrode side surface of the positive electrode portion of each capacitor element is configured as a positive electrode cutting surface, and at least one negative electrode side surface of the common side negative electrode structure provided by the sequential stacking of a plurality of negative electrode portions is configured as a negative electrode processing surface; wherein the positive electrode side surface of the positive electrode portion of each capacitor element directly contacts the first side electrode portion of the first electrode structure layer and is separated from the first bottom electrode portion of the first electrode structure layer; wherein at least one negative electrode side surface of the common side negative electrode structure provided by the sequential stacking of a plurality of negative electrode portions directly contacts the second side electrode portion of the second electrode structure layer and is separated from the second bottom electrode portion of the second electrode structure layer; and wherein the stacked capacitor package structure is configured as a wafer-type capacitor package structure that does not require bending of the positive electrode leads and does not require the use of a conductive carrier substrate.

4. An electronic device comprising: A circuit board structure having at least one positive electrode pad and at least one negative electrode pad; A stacked capacitor package structure is disposed on and electrically connected to the circuit board structure; wherein the stacked capacitor package structure includes a capacitor unit, an insulating package, and an end electrode structure; wherein the capacitor unit includes a plurality of capacitor elements sequentially stacked and electrically connected to each other, the insulating package is configured to partially cover the plurality of capacitor elements, and the end electrode structure includes a first electrode structure layer for covering a first side end of the insulating package and a second electrode structure layer for covering a second side end of the insulating package; wherein each capacitor element has a positive electrode portion and a negative electrode portion, the plurality of positive electrode portions of the plurality of capacitor elements are separated from each other by a predetermined distance, and the plurality of negative electrode portions of the plurality of capacitor elements are sequentially stacked to provide a common side negative electrode structure. In this configuration, a positive electrode side face of the positive electrode portion of each capacitor element is exposed by the first side end of the insulating package, thereby directly electrically connected to the first electrode structure layer; and in this configuration, at least one negative electrode side face of the common side negative electrode structure provided by a plurality of negative electrode portions stacked sequentially is exposed by the second side end of the insulating package, thereby directly electrically connected to the second electrode structure layer; wherein the positive electrode side face of the positive electrode portion of each capacitor element is exposed from a first side face of the first side end of the insulating package and is flush with the first side face; and wherein the common side negative electrode structure provided by a plurality of negative electrode portions stacked sequentially is configured as a thickened conductive adhesive structure.

5. The electronic device as claimed in claim 4, wherein, Each capacitor element includes a metal foil, an oxide layer formed on the metal foil, a surrounding insulating layer disposed on the oxide layer, a conductive polymer layer for connecting the surrounding insulating layer and partially covering the oxide layer, and a conductive adhesive structure layer for connecting the surrounding insulating layer and completely covering the conductive polymer layer. The metal foil has a porous corrosion structure covered by the oxide layer. The conductive adhesive structure layer includes a carbon adhesive layer for completely covering the conductive polymer layer and a silver adhesive layer for completely covering the carbon adhesive layer. The length of the positive electrode portion of the capacitor element is less than the length of the surrounding insulating layer. The positive electrode side face of the positive electrode portion of each capacitor element and at least one negative electrode side face of the common side negative electrode structure provided by sequentially stacking a plurality of negative electrode portions are not completely covered by the insulating encapsulation. In this configuration, the positive electrode portion of each capacitor element is configured as a horizontally extending positive conductive lead portion that does not require bending, and the common side negative electrode structure provided by sequentially stacking a plurality of negative electrode portions is configured as a common negative conductive portion that does not require support by a conductive carrier substrate; wherein the common side negative electrode structure gradually decreases in size towards the second electrode structure layer; wherein the positive electrode side end face of the positive electrode portion of each capacitor element is completely or partially exposed by the first side end face of the insulating package, and at least one negative electrode side end face of the common side negative electrode structure provided by sequentially stacking a plurality of negative electrode portions is completely or partially exposed by the second side end face of the insulating package; The first electrode structure layer is configured to directly electrically contact the positive electrode side face of the positive electrode portion of each capacitor element; and at least one negative electrode side face of the common side negative electrode structure provided by the sequential stacking of a plurality of negative electrode portions is exposed from a second side face of the second side end of the insulating package and is flush with the second side face, such that the second electrode structure layer is configured to directly electrically contact the at least one negative electrode side face of the common side negative electrode structure.

6. The electronic device as claimed in claim 4, wherein, The top end of the uppermost capacitor element only contacts the insulating package, and the bottom end of the lowermost capacitor element only contacts the insulating package; wherein, the insulating package has a top package portion between the top end of the uppermost capacitor element and an upper surface of the insulating package, and the insulating package has a bottom package portion between the bottom end of the lowermost capacitor element and a lower surface of the insulating package; wherein, the minimum thickness of the top package portion and the minimum thickness of the bottom package portion are both less than the maximum thickness of each capacitor element, and the volume occupied by the top package portion and the volume occupied by the bottom package portion of the insulating package are both less than the volume occupied by each capacitor element; wherein, the first electrode structure layer includes a first bottom electrode portion disposed on a first portion of the bottom surface of the insulating package and a first side electrode portion disposed on the first side surface of the insulating package and electrically connected to the first bottom electrode portion; The second electrode structure layer includes a second bottom electrode portion disposed on a second portion of the bottom surface of the insulating package and a second side electrode portion disposed on a second side surface of the insulating package and electrically connected to the second bottom electrode portion; wherein the positive electrode side surface of the positive electrode portion of each capacitor element is configured as a positive electrode cutting surface, and at least one negative electrode side surface of the common side negative electrode structure provided by the sequential stacking of a plurality of negative electrode portions is configured as a negative electrode processing surface; wherein the positive electrode side surface of the positive electrode portion of each capacitor element directly contacts the first side electrode portion of the first electrode structure layer and is separated from the first bottom electrode portion of the first electrode structure layer; wherein at least one negative electrode side surface of the common side negative electrode structure provided by the sequential stacking of a plurality of negative electrode portions directly contacts the second side electrode portion of the second electrode structure layer and is separated from the second bottom electrode portion of the second electrode structure layer; and wherein the stacked capacitor package structure is configured as a wafer-type capacitor package structure that does not require bending of the positive electrode leads and does not require the use of a conductive carrier substrate.

7. A method for fabricating a stacked capacitor package structure, comprising: A plurality of capacitor elements are sequentially stacked, each capacitor element having a positive electrode portion, a negative electrode portion, and a temporary support portion extending from the positive electrode portion, and a plurality of negative electrode portions of the plurality of capacitor elements are sequentially stacked to provide a common side negative electrode structure; an insulating package is formed to partially cover the plurality of capacitor elements, wherein at least one negative electrode side facet of the common side negative electrode structure provided by the sequential stacking of the plurality of negative electrode portions is exposed by a second side endt of the insulating package, and the temporary support portion of each capacitor element is exposed from the insulating package; a first side electrode material is formed on the insulating package; the temporary support portion of each capacitor element is removed such that a positive electrode side facet of the positive electrode portion of each capacitor element is exposed by a first side endt of the insulating package; and a second side electrode material is formed on the insulating package; Wherein, the first side electrode material and the second side electrode material cooperate to form an end electrode structure, and the end electrode structure includes a first electrode structure layer and a second electrode structure layer; wherein, the first electrode structure layer of the end electrode structure is configured to cover the first side end of the insulating package and is directly electrically connected to the positive electrode side end face of the positive electrode portion of each capacitor element; and wherein, the second electrode structure layer of the end electrode structure is configured to cover the second side end of the insulating package and is directly electrically connected to at least one negative electrode side end face of the common side negative electrode structure; wherein, the positive electrode side end face of the positive electrode portion of each capacitor element is exposed from a first side end face of the first side end of the insulating package and is flush with the first side end face; wherein, the common side negative electrode structure provided by the sequential stacking of a plurality of negative electrode portions is configured as a thickened conductive adhesive structure.

8. A method for manufacturing a stacked capacitor package structure as described in claim 7, wherein, In the step of sequentially stacking multiple capacitor elements, the positive electrode portion of each capacitor element does not need to be bent and extends horizontally, and the common side negative electrode structure provided by the sequential stacking of multiple negative electrode portions does not need to be supported by a conductive carrier substrate; wherein, in the step of sequentially stacking multiple capacitor elements, the multiple positive electrode portions of the multiple capacitor elements are separated from each other, the multiple negative electrode portions of the multiple capacitor elements are sequentially stacked and electrically connected to each other, and the multiple temporary carrier portions of the multiple capacitor elements are sequentially stacked to form a carrier support structure; wherein, in the step of forming the insulating package to partially cover the multiple capacitor elements, at least one negative electrode side end face of the common side negative electrode structure is completely or partially exposed by the second side end face of the insulating package; wherein, in the step of forming the first side electrode material on the insulating package, the first side electrode material includes a first bottom electrode portion disposed on a first portion bottom surface of the insulating package and a second bottom electrode portion disposed on a second portion bottom surface of the insulating package; In the step of removing the temporary support portion of each capacitor element, the positive electrode side face of the positive electrode portion of each capacitor element is completely or partially exposed by the first side end of the insulating package; and in the step of forming the second side electrode material on the insulating package, the first electrode structure layer includes a first side electrode portion disposed on the first side end face of the insulating package and electrically connected to the first bottom electrode portion, and a second side electrode portion disposed on a second side end face of the insulating package and electrically connected to the second bottom electrode portion.

9. A method for manufacturing a stacked capacitor package structure as described in claim 7, wherein, Each capacitor element includes a metal foil, an oxide layer formed on the metal foil, a surrounding insulating layer disposed on the oxide layer, a conductive polymer layer for connecting the surrounding insulating layer and partially covering the oxide layer, and a conductive adhesive structure layer for connecting the surrounding insulating layer and completely covering the conductive polymer layer. The metal foil has a porous corrosion structure covered by the oxide layer. The conductive adhesive structure layer includes a carbon adhesive layer for completely covering the conductive polymer layer and a silver adhesive layer for completely covering the carbon adhesive layer. The length of the positive electrode portion of the capacitor element is less than the length of the surrounding insulating layer. The positive electrode side face of the positive electrode portion of each capacitor element and at least one negative electrode side face of the common side negative electrode structure provided by sequentially stacking a plurality of negative electrode portions are not completely covered by the insulating encapsulation. In this configuration, the positive electrode portion of each capacitor element is configured as a horizontally extending positive conductive lead portion that does not require bending, and the common side negative electrode structure provided by sequentially stacking a plurality of negative electrode portions is configured as a common negative conductive portion that does not require support by a conductive carrier substrate; wherein the common side negative electrode structure gradually decreases in size towards the second electrode structure layer; wherein the positive electrode side end face of the positive electrode portion of each capacitor element is completely or partially exposed by the first side end face of the insulating package, and at least one negative electrode side end face of the common side negative electrode structure provided by sequentially stacking a plurality of negative electrode portions is completely or partially exposed by the second side end face of the insulating package; The first electrode structure layer is configured to directly electrically contact the positive electrode side face of the positive electrode portion of each capacitor element; and at least one negative electrode side face of the common side negative electrode structure provided by the sequential stacking of a plurality of negative electrode portions is exposed from a second side face of the second side end of the insulating package and is flush with the second side face, such that the second electrode structure layer is configured to directly electrically contact the at least one negative electrode side face of the common side negative electrode structure.

10. A method for manufacturing a stacked capacitor package structure as described in claim 7, wherein, The top end of the uppermost capacitor element only contacts the insulating package, and the bottom end of the lowermost capacitor element only contacts the insulating package; wherein, the insulating package has a top package portion between the top end of the uppermost capacitor element and an upper surface of the insulating package, and the insulating package has a bottom package portion between the bottom end of the lowermost capacitor element and a lower surface of the insulating package; wherein, the minimum thickness of the top package portion and the minimum thickness of the bottom package portion are both less than the maximum thickness of each capacitor element, and the volume occupied by the top package portion and the volume occupied by the bottom package portion of the insulating package are both less than the volume occupied by each capacitor element; wherein, the first electrode structure layer includes a first bottom electrode portion disposed on a first portion of the bottom surface of the insulating package and a first side electrode portion disposed on the first side surface of the insulating package and electrically connected to the first bottom electrode portion; The second electrode structure layer includes a second bottom electrode portion disposed on a second portion of the bottom surface of the insulating package and a second side electrode portion disposed on a second side surface of the insulating package and electrically connected to the second bottom electrode portion; wherein the positive electrode side surface of the positive electrode portion of each capacitor element is configured as a positive electrode cutting surface, and at least one negative electrode side surface of the common side negative electrode structure provided by the sequential stacking of a plurality of negative electrode portions is configured as a negative electrode processing surface; wherein the positive electrode side surface of the positive electrode portion of each capacitor element directly contacts the first side electrode portion of the first electrode structure layer and is separated from the first bottom electrode portion of the first electrode structure layer; wherein at least one negative electrode side surface of the common side negative electrode structure provided by the sequential stacking of a plurality of negative electrode portions directly contacts the second side electrode portion of the second electrode structure layer and is separated from the second bottom electrode portion of the second electrode structure layer; and wherein the stacked capacitor package structure is configured as a wafer-type capacitor package structure that does not require bending of the positive electrode leads and does not require the use of a conductive carrier substrate.