Particle beam system and method

Abstract

A method includes: determining a plurality of paths on a surface of a wafer; determining an overscan region for the wafer; (a) setting an etch rate of a particle beam; (b) scanning the particle beam along a first path of the plurality of paths; (c) monitoring a location of the particle beam along the first path; (d) in response to determining that the particle beam is located at an outer edge of the overscan region: turning on a reduced trim mode, where turning on the reduced trim mode comprises reducing the etch rate of the particle beam; decelerating the wafer to zero scanning speed; accelerating the wafer until the particle beam is located at an outer edge of the overscan region; and turning off the reduced trim mode; and repeating (a)-(d) for each subsequent path of the plurality of paths until all paths have been scanned.

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