Techniques for controlling chucking during wafer process

Abstract

Certain aspects of the present disclosure are directed towards an apparatus for processing a wafer in a plasma processing system. The apparatus generally includes: a first voltage supply configured to generate a first voltage to be supplied to a first electrode to chuck a wafer; a second voltage supply configured to generate a second voltage to be supplied to a second electrode to chuck the wafer; and a processing device configured to predict a voltage at a tap based on one or more parameters associated with the processing of the wafer, wherein the first voltage and the second voltage are supplied based on the predicted voltage.

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