Semiconductor plasma processing device and efem using the same

Abstract

This invention discloses a semiconductor plasma processing apparatus, comprising: a plasma chamber having an inlet for a wafer to enter and exit; a wafer heater configured to raise the temperature of the wafer; a plasma reactor configured to perform atmospheric pressure plasma processing on the wafer; a cooling head configured to lower the temperature of the wafer by injecting gas; and a controller. The controller is configured to execute instructions to: control the operation of the wafer heater based on a measured surface temperature of the wafer; control the operation of the plasma reactor when the surface temperature of the wafer reaches a target temperature; and control the operation of the cooling head after the atmospheric pressure plasma processing is completed.

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