Antenna device

Abstract

The antenna device includes a first substrate, a signal line, a transistor, a second substrate, an antenna unit, and a liquid crystal layer. The signal line is disposed on the first substrate. The transistor is disposed on the first substrate and includes a gate electrode, multiple first electrodes, and at least one second electrode. The gate electrode is electrically connected to a controlling node. Each of the first electrodes includes an input terminal. The input terminals are electrically connected to the signal line. The at least one second electrode and the first electrodes are interleaved along a direction of arrangement. The at least one second electrode includes an output terminal. The second substrate is disposed opposite the first substrate. The antenna unit includes a first antenna and a second antenna. The first antenna is disposed on the first substrate and directly connected to the output terminal. The second antenna is disposed on the second substrate. The liquid crystal layer is located between the first antenna and the second antenna.

Description

Technical Field

[0001] This invention relates to an antenna device. Prior Technology

[0002] The dielectric constant and refractive index of liquid crystal materials can be altered by changes in the applied electric field. Therefore, if liquid crystal materials are used in antenna structures, such as patch antennas, the variable dielectric constant of the liquid crystal can be used to adjust the operating frequency or radiation direction of the liquid crystal antenna (patch antenna). For example, applying an electric field between metal sheets sandwiching liquid crystals causes a reversible change in the alignment of the liquid crystals.

[0003] However, when the liquid crystal antenna is a high-frequency reflective antenna, the bias line applied to the metal sheet will affect the resonance of the reflective antenna. For example, a reflective antenna without a bias line will be in an over-coupled state, while a reflective antenna with a bias line will be in an under-coupled state. In other words, the phase change of the reflective antenna is thus reduced. Summary of the Invention

[0004] At least one embodiment of the present invention provides an antenna device. The antenna device includes a first carrier plate, a first signal line, a first transistor, a second carrier plate, an antenna element, and a liquid crystal layer. The first signal line is disposed on the first carrier plate. The first transistor is disposed on the first carrier plate and includes a first gate, a plurality of first electrodes, and at least one second electrode. The first gate is electrically connected to a first control node. Each first electrode includes a first input terminal. These first input terminals are electrically connected to the first signal line. At least one second electrode and these first electrodes are arranged alternately along an arrangement direction. At least one second electrode includes a first output terminal. The second carrier plate is disposed opposite the first carrier plate. The antenna element includes a first antenna and a second antenna. The first antenna is disposed on the first carrier plate and is directly connected to the first output terminal. The second antenna is disposed on the second carrier plate. The liquid crystal layer is located between the first antenna and the second antenna.

[0005] In at least one embodiment of the present invention, the antenna device further includes a second signal line. The second signal line is disposed on a first carrier board. A first control node is electrically connected to the second signal line.

[0006] In at least one embodiment of the present invention, the first antenna has a first outer edge and a second outer edge. The first outer edge extends along a first direction, while the second outer edge extends along a second direction. The second direction is perpendicular to the first direction. A first output terminal is directly connected to the first outer edge. The antenna device further includes a second transistor disposed on a first carrier plate. The second transistor includes a second gate, a plurality of third electrodes, and at least one fourth electrode. The second gate is electrically connected to a second control node. Each third electrode includes a second input terminal. These second input terminals are electrically connected to a first signal line. The at least one fourth electrode and these third electrodes are arranged alternately. The at least one fourth electrode includes a second output terminal, and the second output terminal is directly connected to the second outer edge.

[0007] In at least one embodiment of the present invention, the antenna device further includes a second signal line. The second signal line is disposed on a first carrier board. A first control node and a second control node are electrically connected to the second signal line.

[0008] In at least one embodiment of the invention, a first control node is electrically connected to the first electrodes. A second control node is electrically connected to the third electrodes. The antenna device further includes a second signal line and a control transistor. The second signal line is disposed on a first carrier board. The control transistor is disposed on the first carrier board and includes a third gate, a fifth electrode, and a sixth electrode. The third gate is electrically connected to the second signal line. The fifth electrode is electrically connected to the first signal line. The sixth electrode is electrically connected to the first input terminals of the first electrodes and the second input terminals of the third electrodes. The first electrodes and the third electrodes are electrically connected to the first signal line via the conducting control transistor.

[0009] In at least one embodiment of the present invention, the number of these first electrodes is a first quantity, the number of at least one second electrode is a second quantity, and the ratio of the first quantity to the second quantity is (N+1) / N, where N is a positive integer from 1 to 30.

[0010] In at least one embodiment of the present invention, the length of overlap between the first electrode and at least one second electrode in the arrangement direction is in the range of 10 micrometers to 80 micrometers.

[0011] In at least one embodiment of the present invention, the width of each of the first electrode and at least one second electrode is in the range of 2 micrometers to 10 micrometers.

[0012] In at least one embodiment of the present invention, a gap is provided between one of the first electrodes and at least one adjacent second electrode. The gap is in the range of 2 micrometers to 10 micrometers.

[0013] In at least one embodiment of the present invention, the first transistor further includes an electrode connection portion. The electrode connection portion extends along an arrangement direction and connects to the first input terminals. A first signal line is electrically connected to the electrode connection portion. The first electrodes are electrically connected to the first signal line via the electrode connection portion.

[0014] Based on the above, in the antenna device disclosed in the above embodiments, the electrodes of the transistor are arranged in a forked shape and are directly connected to and in contact with the antenna unit. The transistor can not only block the leakage of the resonant electrical signal generated by the antenna unit, but also act as a switch for charging or discharging low-frequency signals. Simple Explanation of the Diagram

[0015] To gain a more complete understanding of the embodiments and their advantages, the following description, taken in conjunction with the accompanying drawings, is provided, wherein: [Figure 1] is a schematic diagram of an antenna device according to at least one embodiment of the present invention; [Figure 2] is a schematic diagram of one of the antenna elements and the transistor in Figure 1; [Figure 3] is a partial cross-sectional view of the cutting segment along A-A' in Figure 1 and the cutting segment along B-B' in Figure 2; [Figure 4] is a schematic diagram of one of the transistors in Figure 1; [Figure 5A] and [Figure 5B] show the simulation results of the phase difference of the S11 parameter for the comparative antenna device and the antenna device in Figure 1, respectively; [Figure 6] is a schematic diagram of an antenna device according to another embodiment of the present invention; [Figure 7] is a schematic diagram of one of the antenna elements, two transistors, and the control transistor in Figure 6; [Figure 8A] is a partial cross-sectional view of the section along the C-C' cutting line segment in Figure 7; [Figure 8B] is a schematic circuit diagram of Figure 7; and [Figure 9A] and [Figure 9B] are simulation results of the amplitude ratio and phase difference of the S11 parameters of the antenna device in Figure 6, respectively. Implementation

[0016] In the following text, to clearly present the technical features of this application, the dimensions (e.g., length, width, thickness, and depth) of the elements (e.g., layers, films, substrates, and regions) in the drawings will be enlarged proportionally, and the number of some elements may be reduced. Therefore, the description and explanation of the embodiments below are not limited to the number of elements in the drawings or the size and shape of the elements, but should cover the size, shape, and deviations from both caused by actual manufacturing processes and / or tolerances. For example, a flat surface shown in the drawings may have rough and / or non-linear characteristics, and an acute angle shown in the drawings may be rounded. Therefore, the elements presented in the drawings of this application are mainly for illustration and are not intended to accurately depict the actual shape of the elements, nor are they intended to limit the scope of the claims in this application.

[0017] Secondly, the terms "approximately," "approximately," or "substantially" used in this case not only cover explicitly stated numerical values ​​and ranges, but also the permissible deviation range understood by someone with ordinary skill in the art to which this invention pertains. This deviation range can be determined by errors that occur during measurement, which may be caused by limitations of the measurement system or process conditions. For example, two objects (such as the planes or traces of a substrate) are "substantially parallel" or "substantially perpendicular." "Substantially parallel" and "substantially perpendicular" respectively mean that the parallelism and perpendicularity between the two objects can include non-parallelism and non-perpendicularity caused by the permissible deviation range.

[0018] Furthermore, "approximately" can indicate a deviation of one or more standard deviations from the aforementioned values, such as ±30%, ±20%, ±10%, or ±5%. The use of terms such as "approximately," "approximately," or "substantially" in this text allows for the selection of an acceptable range of deviations or standard deviations based on optical, etched, mechanical, or other properties, and does not apply to all of the aforementioned optical, etched, mechanical, and other properties using a single standard deviation.

[0019] The spatial relative terms used in this invention, such as "below," "under," "above," and "above," are for the convenience of describing the relative relationship between one element or feature and another, as illustrated in the figures. The true meaning of these spatial relative terms includes other orientations. For example, when the illustration is rotated 180 degrees vertically, the relationship between one element and another may change from "below" or "under" to "above" or "above." Furthermore, the spatial relative descriptions used in this invention should be interpreted in the same way.

[0020] Furthermore, the present invention can be implemented or applied through other different specific embodiments, and the details of the present invention can also be combined, modified, and changed in various ways based on different viewpoints and applications without departing from the concept of the present invention. For clarity in illustrating the following embodiments, elements with the same or similar functions are represented by the same numbers.

[0021] Figure 1 is a schematic diagram of an antenna device 10A according to at least one embodiment of the present invention. Figure 2 is a schematic diagram of one of the antenna elements 140 and transistors 130A in Figure 1. Figure 3 is a partial cross-sectional view along the A-A' cutting line segment in Figure 1 and along the B-B' cutting line segment in Figure 2. Figure 4 is a schematic diagram of one of the transistors 130A in Figure 1. Referring to Figures 1 to 4, the antenna device 10A can be a reflective antenna device or a penetrating antenna device, and can avoid leakage of high-frequency resonant electrical signals that affect resonance without affecting the charging or discharging of low-frequency signals. The antenna device 10A includes multiple first signal lines DL, multiple second signal lines GL, multiple bias lines BL, an antenna structure 100A, multiple anti-static structures 200, a conductive ring 300, a first driving circuit 400, and a second driving circuit 500.

[0022] In the example of Figure 1, multiple first signal lines DL are electrically connected to the first driving circuit 400 and the antenna structure 100A, while multiple second signal lines GL are electrically connected to the second driving circuit 500 and the antenna structure 100A. The multiple first signal lines DL and the multiple second signal lines GL transmit the control signals output by the first driving circuit 400 and the second driving circuit 500 to the antenna structure 100A, respectively, to adjust the direction, phase, or intensity of the electromagnetic waves reflected by the antenna structure 100A.

[0023] Multiple anti-static structures 200 are electrically connected to the ends of multiple first signal lines DL and multiple second signal lines GL that are furthest from the first driving circuit 400 and the second driving circuit 500, respectively, to prevent the antenna structure 100A from being damaged by static electricity. The anti-static structure 200 can be a lightning rod, a diode, or an anti-static ring.

[0024] A conductive ring 300 surrounds the antenna structure 100A, and the vertical projection of a portion of the conductive ring 300 overlaps with the vertical projections of a portion of the first signal line DL and a portion of the second signal line GL. The conductive ring 300 is electrically connected to a common voltage signal, such as a ground signal, a DC signal, or an AC signal.

[0025] Furthermore, the antenna structure 100A includes a first carrier plate 110, a second carrier plate 120, a plurality of transistors 130A, a plurality of antenna elements 140, and a liquid crystal layer 170. The first carrier plate 110 and the second carrier plate 120 are arranged opposite to each other. The materials of the first carrier plate 110 and the second carrier plate 120 can be glass, quartz, organic polymer, or other suitable materials. A plurality of first signal lines DL are spaced apart along the X direction on the first carrier plate 110, while a plurality of second signal lines GL are spaced apart along the Y direction on the first carrier plate 110. The plurality of first signal lines DL and the plurality of second signal lines GL intersect to define a plurality of antenna element regions AA, and one transistor 130A and one antenna element 140 are located in one of the antenna element regions AA.

[0026] It should be noted that, in the example of Figure 1, the antenna structure 100A includes multiple antenna elements 140 to form an antenna array. In other embodiments, the antenna structure 100A may not be an antenna array, so the antenna device 10A may cooperate with the antenna structure 100A and only include a first signal line DL and a second signal line GL, without limitation.

[0027] Multiple transistors 130A are disposed on the first carrier 110 and are located in multiple antenna element regions AA. Each transistor 130A includes a gate 131, multiple electrodes 132, multiple electrodes 133, an electrode connection portion 134, a semiconductor layer 135, and a gate insulating layer 136. The electrodes 132 and 133 are spaced apart from each other and are staggered along the arrangement direction, for example, the electrodes 132 and 133 are arranged in a comb shape along the direction X. In other embodiments, each transistor 130A may include only two electrodes 132 and one electrode 133, or one electrode 132 and two electrodes 133.

[0028] In the example of Figure 1, the plurality of electrodes 132 can be drains and the plurality of electrodes 133 can be sources, but are not limited thereto. In other embodiments, the plurality of electrodes 132 can be sources and the plurality of electrodes 133 can be drains. An electrode connection 134 extends along the arrangement direction (e.g., direction X) and connects one end of the electrodes 132. A semiconductor layer 135 may overlap with a gate 131 in the vertical direction of the first carrier 110, and the semiconductor layer 135 is located between the gate 131 and the electrodes 132, and between the gate 131 and the electrodes 133. A gate insulating layer 136 is located between the gate 131 and the semiconductor layer 135.

[0029] The gates 131 of these transistors 130A are electrically connected to multiple control nodes. In the example of FIG1, these control nodes are electrically connected to multiple second signal lines GL, that is, the gates 131 of these transistors 130A are electrically connected to multiple second signal lines GL. The electrodes 132 of these transistors 130A are electrically connected to multiple bias lines BL, and are electrically connected to multiple first signal lines DL via these bias lines BL. For example, the electrodes 132 of each transistor 130A can be electrically connected to the corresponding bias lines BL via the electrode connection portion 134 to electrically connect to the corresponding first signal lines DL.

[0030] Specifically, each transistor 130A can be equivalent to a band-stop filter. Each electrode 132 includes an input terminal 132a, and each electrode 133 includes an output terminal 133a. Electrode connection portions 134 connect these input terminals 132a. In each transistor 130A, these input terminals 132a are electrically connected to the corresponding first signal line DL via the electrode connection portion 134 and the corresponding bias trace BL, while these output terminals 133a are directly connected to the antenna element 140 located within the same antenna element region AA. In other words, these output terminals 133a directly contact the antenna element 140, and there is no solder or other bias lines between these output terminals 133a and the antenna element 140.

[0031] Furthermore, the number of electrodes 132 can be set to a first number, and the number of electrodes 133 can be set to a second number, and the ratio of the first number and the second number can be (N+1) / N, where N is a positive integer from 1 to 30. That is, the number of electrodes 132 and the number of electrodes 133 can differ by 1. In other embodiments, the number of electrodes 132 can be the same as the number of electrodes 133.

[0032] Furthermore, the overlap length L of electrodes 132 and 133 in the alignment direction (e.g., direction X) ranges from 10 micrometers to 80 micrometers. The width W of each electrode 132 and each electrode 133 ranges from 2 micrometers to 10 micrometers. A gap S exists between one of the electrodes 132 and one of the adjacent electrodes 133, and this gap S ranges from 2 micrometers to 10 micrometers. In the example of Figure 1, the gap S between each electrode 132 and one of the adjacent electrodes 133 is in the range of 2 micrometers to 10 micrometers.

[0033] Antenna element 140 includes a first antenna 150 and a second antenna 160. The first antenna 150 and the second antenna 160 are respectively disposed on the first carrier plate 110 and the second carrier plate 120, and the vertical projection of the first antenna 150 partially overlaps with the vertical projection of the second antenna 160. It should be noted that, in Figures 1 and 2, to clearly illustrate the structure of the first antenna 150, the structure of the first antenna 150 that overlaps with the second antenna 160 is still drawn with solid lines.

[0034] The first antenna 150 includes a frame portion 151, multiple main body portions 152, multiple protrusions 153, and multiple connecting portions 154. The frame portion 151 is generally rectangular in shape and has four outer edges 151a, 151b, 151c, and 151d, wherein outer edges 151a and 151c extend along the direction X, while outer edges 151b and 151d extend along the direction Y. That is, the extension direction of outer edges 151a and 151c can be perpendicular to the extension direction of outer edges 151b and 151d. In each antenna element region AA, the output terminals 133a of the transistor 130A can be directly connected to any one of the outer edges 151a, 151b, 151c, or 151d of the frame portion 151. In the example of FIG1, these output terminals 133a are directly connected to the outer edge 151a.

[0035] Multiple main body portions 152 are located within the frame portion 151 and are respectively adjacent to the four outer edges 151a, 151b, 151c, and 151d. Each main body portion 152 is generally rectangular in shape. Multiple protrusions 153 are respectively connected to the edges of the multiple main body portions 152 away from the frame portion 151. Each protrusion 153 is generally rectangular in shape, and the side length of each protrusion 153 is smaller than the side length of each main body portion 152. Multiple connecting portions 154 connect the frame portion 151 and the multiple main body portions 152 at intervals.

[0036] The second antenna 160 includes an outer frame portion 161, a cross portion 162, and a plurality of connecting portions 163. The outer frame portion 161 is generally rectangular in shape. The cross portion 162 is located inside the outer frame portion 161 and spaced apart from it. The cross portion 162 is generally cross-shaped. The plurality of connecting portions 163 connect the outer frame portion 161 and the cross portion 162 at intervals. Further, the vertical projections of the plurality of main body portions 152 of the first antenna 150 overlap with the vertical projections of the outer frame portion 161 and the cross portion 162 of the second antenna 160, and the vertical projections of the plurality of protrusions 153 of the first antenna 150 also overlap with the vertical projections of the cross portion 162 of the second antenna 160. The liquid crystal layer 170 is located between the first antenna 150 and the second antenna 160, that is, the liquid crystal layer 170, the first antenna 150, and the second antenna 160 are located between the first substrate 110 and the second substrate 120.

[0037] Specifically, the antenna device 10A further includes a ground metal layer GM, four metal layers M1, M2, M3, and M4, and four dielectric layers D1, D2, D3, and D4. The ground metal layer GM is stacked on one side of the first carrier plate 110. On the other side of the first carrier plate 110, i.e., the side facing the second carrier plate 120, metal layers M1, D1, M2, D2, M3, and D3 are stacked sequentially. On the side of the second carrier plate 120 facing the first carrier plate 110, metal layer M4 and dielectric layer D4 are stacked sequentially. The liquid crystal layer 170 is sandwiched between metal layers M3 and M4 and dielectric layers D3 and D4.

[0038] Furthermore, the second signal line GL and gate 131 belong to metal layer M1, while the first signal line DL, bias trace BL, electrodes 132 and 133, and electrode connection 134 belong to metal layer M2. Gate insulating layer 136 belongs to dielectric layer D1. The first antenna 150 belongs to metal layer M3, and electrode 133 can directly contact the first antenna 150 through dielectric layer D2. The second antenna 160 belongs to metal layer M4.

[0039] On the other hand, a portion of the conductive ring 300 belongs to metal layer M1, and the remainder belongs to metal layer M2, thereby avoiding interference with the first signal line DL or the second signal line GL. Furthermore, the antenna device 10A also includes multiple auxiliary wires 610, a common electrode 620, multiple conductive pads 630, a sealant 640, and a conductive connection structure 650. The auxiliary wires 610 are used to reduce the resistance of the conductive ring 300; therefore, when adjacent to a portion of the conductive ring 300 belonging to metal layer M1, the auxiliary wire 610 can belong to metal layer M2, and when adjacent to the remaining portion of the conductive ring 300 belonging to metal layer M2, the auxiliary wire 610 can belong to metal layer M1. The common electrode 620 belongs to metal layer M4.

[0040] Multiple conductive pads 630 can pass through dielectric layers D1 and D2, dielectric layer D2, and dielectric layer D4, respectively, to electrically connect the conductive ring 300, auxiliary wire 610, and common electrode 620. The material of the conductive pads 630 can be indium tin oxide, indium zinc oxide, fluorine-doped indium oxide, or other metal oxide conductive materials. An encapsulant 640 surrounds the liquid crystal layer 170 and is located between the conductive pads 630. Conductive connection structures 650 are distributed within the encapsulant 640, enabling electrical conductivity between the conductive ring 300, auxiliary wire 610, common electrode 620, and conductive pads 630.

[0041] For example, when antenna device 10A receives electromagnetic waves operating in an operating frequency band (26 GHz to 30 GHz), the first antenna 150 and the second antenna 160 form a resonant current path, thereby generating a magnetic field and exciting electromagnetic waves. Specifically, the electrodes 132 and 133 of each transistor 130A are arranged in a forked pattern, forming an interdigital capacitor, which can be equivalent to a band-stop filter that shields (blocks) electrical signals in this operating frequency band. That is, transistor 130A can prevent the resonant electrical signals generated by antenna element 140 from leaking outwards. Therefore, transistor 130A can block coupling problems caused by antenna element 140 to bias trace BL, first signal line DL, second signal line GL, or other signal sources.

[0042] Furthermore, transistor 130A can also function as a switch for charging or discharging low-frequency signals. Specifically, when transistor 130A is turned on, the first signal line DL can be connected to the first antenna 150 via semiconductor layer 135, and the control signal transmitted via the first signal line DL can be transmitted to the first antenna 150. The voltage difference between the first antenna 150 and the second antenna 160 can charge or discharge the liquid crystal capacitor Clc formed in liquid crystal layer 170, thereby changing the dielectric constant of liquid crystal layer 170. The change in the dielectric constant of liquid crystal layer 170 can cause a frequency shift in the electromagnetic waves reflected by antenna element 140. Thus, by adjusting the voltage difference between the first antenna 150 and the second antenna 160, the direction, phase, or intensity of the electromagnetic waves reflected by antenna structure 100A can be controlled. Therefore, transistor 130A, which forms a fork capacitor, not only shields against high-frequency signal leakage generated by antenna element 140 but also maintains the charging or discharging of low-frequency signals through it to the liquid crystal capacitor Clc formed in liquid crystal layer 170.

[0043] For example, within one frame, multiple first signal lines DL sequentially transmit control signals, for example, along the X direction. Then, multiple second signal lines GL sequentially transmit control signals, for example, along the opposite direction Y, to activate the corresponding transistors 130A. This allows the first antenna 150 of the antenna element 140 to receive the control signals (low-frequency signals) transmitted by the first signal lines DL, thereby changing the dielectric constant of the liquid crystal layer 170 of the antenna element 140. Then, as the frame ends, the multiple second signal lines GL sequentially turn off the corresponding transistors 130A. Then, in the next frame, the multiple first signal lines DL sequentially change the control signals to be transmitted, and the multiple second signal lines GL sequentially turn on the corresponding transistors 130A. In this cyclical control, the antenna device 10A can regulate the direction, phase, or intensity of the reflected electromagnetic waves.

[0044] Figures 5A and 5B show the simulation results of the S11 parameter phase difference for the comparative example antenna device and the antenna device 10A of Figure 1, respectively. Referring to Figures 5A and 5B, the vertical axis represents angle in degrees, and the horizontal axis represents frequency in GHz. Lines 711, 712, 713, and 714 represent the S11 parameter phase difference when the dielectric constant of the liquid crystal layer of the comparative example antenna device is 2.45, 2.81, 3.17, and 3.53, respectively. Lines 721, 722, 723, and 724 represent the S11 parameter phase difference when the dielectric constant of the liquid crystal layer 170 of the antenna device 10A is 2.45, 2.81, 3.17, and 3.53, respectively. The comparative example antenna device is similar to the antenna device 10A, but the difference is that the transistor of the comparative example antenna device is not directly connected to the antenna element, but is connected to the antenna element via a bias trace.

[0045] As shown in Figures 5A and 5B, in the frequency range of 28 GHz to 32 GHz, the S11 parameter of the comparative antenna device is in an undercoupled state, meaning the phase change of the comparative antenna device does not exceed 180 degrees. In the frequency range of 25 GHz to 29 GHz, the S11 parameter of antenna device 10A has switched to an overcoupled state, meaning the phase change of antenna device 10A exceeds 180 degrees. In other words, in antenna device 10A, because transistor 130A directly contacts antenna element 140 to shield the high-frequency electrical signal leakage generated by antenna element 140, the phase change of antenna device 10A is not reduced, thus maintaining an overcoupled state.

[0046] Figure 6 is a schematic diagram of an antenna device 10B according to another embodiment of the present invention. Figure 7 is a schematic diagram of one antenna element 140, two transistors 130A and 130B, and a control transistor 180 in Figure 6. Figure 8A is a partial cross-sectional view along the C-C' cutting line segment in Figure 7. Figure 8B is a schematic circuit diagram of Figure 7. Referring to Figures 6 to 8B, the antenna device 10B of Figure 6 is similar to the antenna device 10A of Figure 1, except that the antenna device 10B also includes multiple common signal lines CL, and the antenna structure 100B of the antenna device 10B also includes multiple transistors 130B and multiple control transistors 180.

[0047] In the example of Figure 6, multiple common signal lines CL are spaced apart along the Y direction on the first carrier plate 110. Furthermore, the multiple common signal lines CL can be parallel to multiple second signal lines GL, and are distributed at equal intervals with the multiple second signal lines GL on the first carrier plate 110. The structure of each transistor 130B is similar to that of each transistor 130A. In other words, each transistor 130B can also form a fork capacitor and can be equivalent to a bandstop filter. It should be noted that, for the purpose of clearly illustrating the structure of the first antenna 150, the structure of the first antenna 150 overlapping with the second antenna 160 is still drawn with solid lines in Figures 6 and 7.

[0048] Each transistor 130B also includes a gate 131, a plurality of electrodes 132, a plurality of electrodes 133, an electrode connection portion 134, a semiconductor layer 135, and a gate insulating layer 136. In the examples of Figures 6 and 7, in each transistor 130B, these electrodes 132 and 133 are arranged in a comb-like pattern along the Y direction. The electrode connection portion 134 extends along the Y direction and connects to these electrodes 132. The control transistor 180 includes a gate 181, electrodes 182 and 183, a semiconductor layer 184, and a gate insulating layer 185.

[0049] In antenna structure 100B, the gates 181 of multiple control transistors 180 are electrically connected to multiple second signal lines GL, and the electrodes 182 of multiple control transistors 180 are electrically connected to multiple first signal lines DL. Furthermore, the electrodes 183 of multiple control transistors 180 are electrically connected via multiple bias lines BL to multiple electrodes 132 of multiple transistors 130A and multiple transistors 130B. That is, in each control transistor 180, the gate 181 is electrically connected to the corresponding second signal line GL, the electrode 182 is electrically connected to the corresponding first signal line DL, and the electrode 183 is electrically connected to the electrode connection portion 134 of the corresponding transistor 130A and the electrode connection portion 134 of the corresponding transistor 130B. Therefore, as shown in Figures 4 and 7, the electrode 183 is electrically connected to multiple input terminals 132a of the corresponding transistor 130A and the multiple input terminals 132a of the corresponding transistor 130B.

[0050] Referring to Figure 4, specifically, in each antenna element region AA, the gate 131 of transistor 130A is electrically connected to a control node, and this control node is electrically connected to the electrode 132 of transistor 130A. That is, in transistor 130A, the gate 131 is electrically connected to multiple electrodes 132. Similarly, the gate 131 of transistor 130B is electrically connected to a control node, and this control node is electrically connected to the electrode 132 of transistor 130B. That is, in transistor 130B, the gate 131 is electrically connected to multiple electrodes 132. On the other hand, the output terminals 133a of the electrode 133 of transistor 130A can be directly connected to the outer edge 151a of the first antenna 150, and the output terminals 133a of the electrode 133 of transistor 130B can be directly connected to the outer edge 151b of the first antenna 150. In other words, transistors 130A and 130B are directly connected to the mutually perpendicular outer edges 151a and 151b of the first antenna 150, respectively.

[0051] Furthermore, both the common signal line CL and the second signal line GL belong to metal layer M1. In the control transistor 180, the gate 181 belongs to metal layer M1, the electrodes 182 and 183 belong to metal layer M2, and the gate insulating layer 185 belongs to dielectric layer D1. In each transistor 130A and 130B, the gate 131 belongs to metal layer M1, the electrodes 132 and 133 belong to metal layer M2, and the gate insulating layer 136 belongs to dielectric layer D1, wherein the electrode 132 can directly contact the gate 131 through dielectric layer D1.

[0052] The vertical projection of the common signal line CL can partially overlap with the vertical projection of the electrode 183 of the control transistor 180. The dielectric layer D1 between the common signal line CL and the electrode 183 can form a storage capacitor Cst to maintain the voltage level of the electrode 183, the plurality of electrodes 132 of the transistor 130A, and the plurality of electrodes 132 of the transistor 130B.

[0053] In each antenna element region AA, the control transistor 180 can simultaneously drive transistors 130A and 130B to charge or discharge the liquid crystal capacitor Clc and the storage capacitor Cst. For example, when the control transistor 180 corresponding to the second signal line GL is turned on, the electrodes 132 of transistor 130A and 132 of transistor 130B can be electrically connected to the first signal line DL via the turned-on control transistor 180. If the control signal transmitted by the first signal line DL is at a high potential, the liquid crystal capacitor Clc can be charged through transistors 130A and 130B, and simultaneously, the storage capacitor Cst is also charged. If the control signal transmitted by the first signal line DL is at a low potential, the liquid crystal capacitor Clc can be discharged through transistors 130A and 130B, and simultaneously, the storage capacitor Cst is also discharged.

[0054] Thus, by simultaneously driving transistors 130A and 130B via control transistor 180, the antenna device 10B can simplify the circuitry for driving transistors 130A and 130B. It should be noted that in other embodiments, the antenna device may not include control transistor 180. Therefore, the gates 131 of transistors 130A and 130B need to be connected to the second signal line GL without being electrically connected to their respective electrodes 132, while the electrodes 132 of transistors 130A and 130B need to be connected to the first signal line DL. The liquid crystal capacitor Clc and the storage capacitor Cst can also be charged or discharged under the control of transistors 130A and 130B.

[0055] Figures 9A and 9B show the simulation results of the gain and phase difference of the S11 parameters of the antenna device 10B in Figure 6, respectively. Referring to Figure 9A, the vertical axis represents the gain in decibels (dB), and the horizontal axis represents the frequency in GHz. Lines 811, 812, 813, and 814 represent the gain of the S11 parameters of the antenna device 10B in TE mode when the dielectric constant of the liquid crystal layer 170 is 2.45, 2.81, 3.17, and 3.53, respectively. Lines 821, 822, 823, and 824 represent the gain of the S11 parameters of the antenna device 10B in TM mode when the dielectric constant of the liquid crystal layer 170 is 2.45, 2.81, 3.17, and 3.53, respectively.

[0056] Referring to Figure 9B, the vertical axis represents angle in degrees, and the horizontal axis represents frequency in GHz. Lines 831, 832, 833, and 834 represent the phase differences of the S11 parameters of the antenna device 10B in TE mode when the dielectric constant of the liquid crystal layer 170 is 2.45, 2.81, 3.17, and 3.53, respectively. Lines 841, 842, 843, and 844 represent the phase differences of the S11 parameters of the antenna device 10B in TM mode when the dielectric constant of the liquid crystal layer 170 is 2.45, 2.81, 3.17, and 3.53, respectively.

[0057] If antenna device 10B is placed horizontally on the ground, antenna device 10B set to TE mode can be considered as reflecting vertically polarized electromagnetic waves, while antenna device 10B set to TM mode can be considered as reflecting horizontally polarized electromagnetic waves. As shown in Figures 9A and 9B, the S11 parameter of antenna device 10B operates in almost the same frequency range in TE and TM modes. In other words, antenna device 10B can achieve polarity symmetry, polarity consistency, and polarity balance through matching of transistors 130A and 130B. Therefore, each first antenna 150 of antenna device 10B can be positioned symmetrically with respect to the center of each first antenna 150 by two or more even numbers of transistors 130A and 130B, thereby avoiding the problem of asymmetrical resonant structure.

[0058] In summary, in antenna device 10A, the electrodes 132 and 133 of transistor 130A are arranged in a forked pattern and are directly connected to and in contact with antenna element 140. Transistor 130A not only blocks the leakage of resonant electrical signals generated by antenna element 140, but also acts as a switch for charging or discharging low-frequency signals. Furthermore, in antenna device 10B, transistors 130A and 130B with forked electrodes 132 and 133 are directly connected to and in contact with the mutually perpendicular outer edges 151a and 151b of antenna element 140, thereby achieving polarity symmetry in antenna device 10B. In addition, control transistor 180 can simultaneously drive transistors 130A and 130B, simplifying the circuitry for driving transistors 130A and 130B in antenna device 10B.

[0059] Although the present invention has been disclosed above by way of embodiments, it is not intended to limit the present invention. Those skilled in the art to which this invention pertains may make some modifications and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of the present invention shall be determined by the appended claims.

[0060] 10A, 10B: Antenna devices 100A, 100B: Antenna Structure 110: First carrier board 120: Second carrier plate 130A, 130B: Transistors 131: Gate 132, 133: Electrodes 132a: Input terminal 133a: Output terminal 134: Electrode connection part 135: Semiconductor layer 136: Gate insulation layer 140: Antenna Unit 150: First Antenna 151: Frame 151a, 151b, 151c, 151d: Outer edge 152: Main body 153: Protrusion 154: Connecting part 160: Second Line 161: Outer frame 162: Intersection 163: Connecting part 170: Liquid Crystal Layer 180: Control Transistor 181: Gate 182, 183: Electrodes 184: Semiconductor layer 185: Gate insulation layer 200: Antistatic structure 300: Conductive ring 400: First driving circuit 500: Second drive circuit 610: Auxiliary wire 620: Common electrode 630: Conductive pad 640: Sealing 650: Conductive connection structure 711,712,713,714,721,722,723,724,811,812,813,814,821,822,823,824,831,832,833,834,841,842,843,844: Lines AA: Antenna element area BL: Bias routing CL: Shared signal line Clc: Liquid crystal capacitor Cst: Storage capacitor DL: First Signal Line D1, D2, D3, D4: Dielectric layers GL: Second Signal Line GM: Grounding metal layer L: Length M1, M2, M3, M4: Metal layers S: Gap W: Width X, Y: Direction

Claims

1. An antenna device, comprising: a first carrier plate; a first signal line disposed on the first carrier plate; a first transistor disposed on the first carrier plate and comprising: a first gate electrically connected to a first control node; a plurality of first electrodes, each of the first electrodes comprising a first input terminal, the first input terminals being electrically connected to the first signal line; and at least one second electrode, arranged alternately with the first electrodes along an arrangement direction, wherein the first electrodes and the at least one second electrode are arranged in a forked manner, the at least one second electrode comprising a first output terminal; a second carrier plate disposed opposite the first carrier plate; an antenna unit comprising: a first antenna disposed on the first carrier plate, wherein the first antenna has a first outer edge, and the first outer edge is directly connected to the first output terminal; and a second antenna disposed on the second carrier plate; and a liquid crystal layer located between the first antenna and the second antenna.

2. The antenna device as claimed in claim 1 further comprises: a second signal line disposed on the first carrier board, wherein the first control node is electrically connected to the second signal line.

3. The antenna device as claimed in claim 1, wherein the first antenna further has a second outer edge extending along a first direction, and the second outer edge extending along a second direction perpendicular to the first direction; wherein the antenna device further comprises: a second transistor disposed on the first carrier plate and comprising: a second gate electrically connected to a second control node; a plurality of third electrodes, each of the third electrodes comprising a second input terminal electrically connected to the first signal line; and at least one fourth electrode, arranged alternately with the third electrodes, wherein the at least one fourth electrode comprises a second output terminal directly connected to the second outer edge.

4. The antenna device as claimed in claim 3 further comprises: a second signal line disposed on the first carrier board, wherein the first control node and the second control node are electrically connected to the second signal line.

5. The antenna device as claimed in claim 3, wherein the first control node is electrically connected to the first electrodes, and the second control node is electrically connected to the third electrodes; wherein the antenna device further comprises: a second signal line disposed on the first carrier board; and a control transistor disposed on the first carrier board, and comprising: a third gate electrically connected to the second signal line; a fifth electrode electrically connected to the first signal line; and a sixth electrode electrically connected to the first input terminals of the first electrodes and the second input terminals of the third electrodes, wherein the first electrodes and the third electrodes are electrically connected to the first signal line via the activated control transistor.

6. The antenna device as claimed in claim 1, wherein the number of the first electrodes is a first quantity, the number of the at least one second electrode is a second quantity, and the ratio of the first quantity to the second quantity is (N+1) / N, where N is a positive integer from 1 to 30.

7. The antenna device as claimed in claim 1, wherein the first electrode and the at least one second electrode overlap by a length in the arrangement direction ranging from 10 micrometers to 80 micrometers.

8. The antenna device as claimed in claim 1, wherein the width of each of the first electrodes and the at least one second electrode is in the range of 2 micrometers to 10 micrometers.

9. The antenna device as claimed in claim 1, wherein one of the first electrodes has a gap with the adjacent at least one second electrode, the gap being in the range of 2 micrometers to 10 micrometers.

10. The antenna device as claimed in claim 1, wherein the first transistor further comprises: an electrode connection portion extending along the arrangement direction and connected to the first input terminals, wherein the first signal line is electrically connected to the electrode connection portion, and the first electrodes are electrically connected to the first signal line via the electrode connection portion.

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