Image sensors with pixel arrangements having multi-gate transfer structures

Abstract

Image sensors with pixel arrangements having multi-gate transfer structures are disclosed herein. In one embodiment, a pixel arrangement includes a plurality of pixels, a floating diffusion, and a transfer center gate (TCG) transistor. Each of the pixels can include a photosensor configured to photogenerate image charge in response to incident light, and a transfer transistor coupled to the photosensor. The floating diffusion can be configured to receive the image charge from the pixels. The TCG transistor can selectively couple the transfer transistor of each of the pixels to the floating diffusion. The transfer transistor of each of the pixels can be configured to selectively couple the photosensor of a respective one of the pixels to the TCG transistor. In some embodiments, the pixel arrangement further includes an outgoing gate (OG) transistor selectively coupling the TCG transistor to the floating diffusion.

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