Circuit structure and manufacturing method thereof
TW202640953APending Publication Date: 2026-10-01SILICONWARE PRECISION IND CO LTD
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Patent Information
- Application Number
- TW114111818
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-03-27
- Publication Date
- 2026-10-01
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Figure TWG2TA001077934_001 
Figure TWG2TA001077934_002 
Figure TWG2TA001077934_003
Abstract
A circuit structure and manufacturing method thereof, wherein a first circuit layer and a first conductive via are formed on a first dielectric material, and a conductive bump is formed on the first conductive via, and then a second dielectric material is formed on the first circuit layer, and a second circuit layer and a second conductive via are formed on the second dielectric material, wherein the second conductive via is stacked on the first conductive via, and the conductive bump is arranged at the junction of the first conductive via and the second conductive via to increase the contact area between the first conductive via and the second conductive via.
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