Semiconductor devices and semiconductor memory devices

Abstract

The present invention relates to a semiconductor device and a semiconductor memory device. The semiconductor device of the embodiment includes: a first electrode; a second electrode; an oxide semiconductor layer disposed between the first electrode and the second electrode; a gate electrode facing the oxide semiconductor layer; a gate insulating layer disposed between the gate electrode and the oxide semiconductor layer; a conductive layer connected to the second electrode; a first insulating layer disposed on the first electrode side of the gate electrode; a second insulating layer disposed on the second electrode side of the gate electrode; and a third insulating layer disposed between itself and the gate electrode. The second electrode includes: a metal nitride layer connected to the conductive layer; and an oxide conductive layer disposed between the metal nitride layer and the oxide semiconductor layer, and connected to the oxide semiconductor layer. In a first cross-section perpendicular to a first direction from the first electrode toward the second electrode and including the metal nitride layer, the gate insulating layer surrounds the metal nitride layer.

Images