Semiconductor devices and fabricating methods thereof

Abstract

A semiconductor device including an insulating wall, a first gate electrode layer, a second gate electrode layer, a first semiconductor layer, and a second semiconductor layer. The insulating wall has a first side and a second side opposite each. The first gate electrode layer and the second gate electrode layer extend along the first direction and are coupled to the first side and the second side of the insulating wall respectively. The first semiconductor layer and the second semiconductor layer extend along the first direction and are coupled to the first gate electrode layer and the second gate electrode layer respectively. A first end of the first semiconductor layer and a first end of the second semiconductor layer are connected. The first gate electrode layer and the second gate electrode layer are disposed between the first semiconductor layer and the second semiconductor layer in the third direction.

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