Semiconductor device and methods of fabrication

Abstract

A semiconductor device and methods of fabrication of a semiconductor device. The semiconductor device comprises a memory cell and a logic gate. The memory cell comprises a floating gate and a readout channel. The logic gate comprises a first channel, a second channel, and a logic charge reservoir disposed between the first channel and the second channel and arranged to provide charge carriers to the first channel or the second channel dependent on an input voltage applied to the logic gate. The readout channel of the memory cell and the first channel of the logic gate are formed from a common layer of semiconductor material.

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