Memory elements

Abstract

This invention improves the density of memory elements. One embodiment of the memory element includes: a first conductive post and a second conductive post, each extending in a first direction and arranged in a second direction; a third conductive post and a fourth conductive post, each extending in the first direction at a position offset from the first and second conductive posts in a third direction and arranged in the second direction; a first semiconductor film disposed at a first position in the first direction, between the first and third conductive posts; a second semiconductor film disposed at a first position, between the second and fourth conductive posts; a first insulating film disposed at a first position, between the second and third conductive posts; a first charge storage film and a third charge storage film, respectively disposed between the first and third conductive posts and the first semiconductor film; and a second and fourth charge storage film, respectively disposed between the second and fourth conductive posts and the second semiconductor film. The third conductive post is located in the second direction between the first and second conductive posts, and the second conductive post is located in the second direction between the third and fourth conductive posts.

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