Memory device

Abstract

One embodiment provides a memory device with stable magnetization. The memory device resulting from this embodiment includes a first conductor, a first strongly magnetic body, a second conductor, a first non-magnetic body, a second non-magnetic body, a magnetoresistive element, and a third conductor. The first strongly magnetic body extends in a first direction and is positioned further towards a second direction intersecting the first direction than the first conductor, and has an easy magnetization axis along the first direction. The second conductor is connected to the first strongly magnetic body. The first non-magnetic body is positioned further towards the second direction than the first strongly magnetic body, is connected to the first strongly magnetic body, and includes one or more of titanium, magnesium, and aluminum. The second nonmagnetic body is located further towards the second direction than the first nonmagnetic body and is in contact with the first nonmagnetic body. It contains one or more of the following: a heavy metal element with a low solid solution limit, titanium oxide, titanium nitride, magnesium oxide, magnesium nitride, aluminum oxide, and aluminum nitride. The magnetoresistive element is located further towards the second direction than the second nonmagnetic body and is connected to the second nonmagnetic body. The third conductive body is located further towards the second direction than the magnetoresistive element.

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