Magnetic memory device

Abstract

This invention provides a magnetic memory device comprising a magnetoresistive element with excellent properties. The magnetic memory device of the embodiment includes a first electrode, a second electrode, and a magnetoresistive element. The magnetoresistive element includes a first magnetic layer, a second magnetic layer, an insulating layer disposed between the first and second magnetic layers, and a lanthanide oxide layer disposed between the first electrode and the first magnetic layer. The lanthanide oxide layer contains at least one lanthanide element selected from La, Ce, Pr, Nd, Pm, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb, and Lu, oxygen, and at least one specified element selected from Ru, Rh, Pd, Re, Os, and Pt. The lanthanide oxide layer comprises a first portion and a second portion respectively containing at least one lanthanide element and oxygen. The concentration of the at least one specified element is higher in the first portion than in the second portion, and the second portion is located between the first portion and the first magnetic layer.

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