Magnetic memory device

Abstract

This invention improves magnetic properties. The magnetic memory device of this invention includes a magnetoresistive element comprising: a first ferromagnetic layer; a second ferromagnetic layer; a third ferromagnetic layer; a first nonmagnetic layer disposed between the first and second ferromagnetic layers; and a second nonmagnetic layer disposed between the second and third ferromagnetic layers. The second ferromagnetic layer includes: a third nonmagnetic layer containing platinum (Pt); and a fourth ferromagnetic layer disposed opposite the third nonmagnetic layer on the side of the second nonmagnetic layer, containing cobalt (Co). The third nonmagnetic layer has a film thickness of 0.3 nm or less.

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