Resistive random access memory device

TW202641028APending Publication Date: 2026-10-01UNITED MICROELECTRONICS CORP
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Patent Information

Application Number
TW114109859
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-03-17
Publication Date
2026-10-01

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Abstract

A resistive random access memory (RRAM) includes an interlayer dielectric (ILD) layer on a substrate, a contact plug in the ILD layer, a bottom electrode on the contact plug, a resistor switching layer on the bottom electrode, and a capping layer on the resistor switching layer. Preferably, the capping layer includes more than one capping layer and the more than one capping layer includes ruthenium oxide (RuO
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