Resistive random access memory device
TW202641029APending Publication Date: 2026-10-01UNITED MICROELECTRONICS CORP
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Patent Information
- Application Number
- TW114110936
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-03-24
- Publication Date
- 2026-10-01
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Abstract
A resistive random access memory (RRAM) includes an interlayer dielectric (ILD) layer on a substrate, a contact plug in the ILD layer, a bottom electrode on the contact plug, a resistor switching layer on the bottom electrode, and a top electrode (TE) on the resistor switching layer. Preferably, the TE comprises more than one TE and the more than one TE comprises titanium nitride (TiN).
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