Memory device and method for forming the same
TW202641031APending Publication Date: 2026-10-01POWERCHIP SEMICON MFG CORP
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Patent Information
- Application Number
- TW114111979
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-03-28
- Publication Date
- 2026-10-01
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Figure TWG2TA001077958_001 
Figure TWG2TA001077958_002 
Figure TWG2TA001077958_003
Abstract
The present disclosure provides a memory device and a method for forming the same. The memory device includes a bottom electrode disposed on a substrate, a resistance variable layer disposed on the bottom electrode, an oxide capture layer disposed on the resistance variable layer, and a top electrode structure disposed on the oxide capture layer and including a top electrode adjoining to the oxide capture layer and a conductive cap layer disposed on the top electrode, wherein the resistance of the conductive cap layer is greater than the resistance of the top electrode.
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