Semiconductor memory devices and methods for manufacturing semiconductor memory devices

Abstract

This invention relates to a semiconductor memory device and a method for manufacturing a semiconductor memory device. One embodiment of the semiconductor memory device includes a substrate and a first transistor. The first transistor has a first gate insulating film, at least a portion of which faces the region between a first diffusion region and a second diffusion region, and a first gate electrode located opposite the substrate relative to the first gate insulating film. The first gate electrode has a first conductive layer, a first insulating layer, and a second conductive layer. The first insulating layer is disposed on the surface of a portion of the first conductive layer. The second conductive layer, when viewed from a first direction that is the thickness direction of the substrate, has a first portion overlapping the first insulating layer and a second portion disposed at a position offset from the first insulating layer and overlapping the first conductive layer, and is connected to the first conductive layer.

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