Capacitor structure and manufacturing method thereof

TW202641037APending Publication Date: 2026-10-01NAN YA TECH
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Patent Information

Application Number
TW114121905
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-03-24
Filing Date
2025-06-11
Publication Date
2026-10-01

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Abstract

A capacitor structure and a manufacturing method thereof are provided. The manufacturing method of the capacitor structure of the present invention includes the following steps. A bottom electrode is formed. An oxide layer is deposited on the bottom electrode. During the depositing of the oxide layer, a portion of the bottom electrode is oxidized to form an oxide film. The oxide layer and the oxide film of the bottom electrode are removed. An insulation layer is formed on the remaining bottom electrode. A top electrode is formed on the insulation layer.
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