TVS diode having asymmetric breakdown voltage and method of formation

Abstract

In one embodiment, an asymmetric transient voltage suppression (TVS) device may include a semiconductor substrate, the semiconductor substrate comprising an inner region, having a first polarity, and a first surface region, disposed on a first surface of the semiconductor substrate, and comprising a second polarity, opposite the first polarity. The device may further include a second surface region, comprising the second polarity, and disposed on a second surface of the semiconductor substrate, opposite the first surface, wherein the first surface region comprises a first dopant concentration, the second surface region comprising a second dopant concentration, less than the first dopant concentration; and a first channel region, disposed adjacent to a perimeter of the first surface region, the first channel region comprising the second polarity, wherein the first channel region extends bellow the first surface to a channel depth that is greater than a first depth of the first surface region.

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