Semiconductor device manufacturing method

Abstract

The embodiments relate to a transistor, a semiconductor memory device, and a method for manufacturing a transistor. The transistor of the embodiment comprises: a semiconductor layer; a convex element region disposed on the semiconductor layer, having a specific width in a first direction along the surface of the semiconductor layer, and extending in a second direction along the surface of the semiconductor layer and intersecting the first direction; a gate electrode disposed above the element region; and a substrate covering the gate electrode; and element separation portions extending in the second direction on both sides of the element region in the first direction, with the substrate continuously extending from the gate electrode to the element separation portions and lying beneath the element separation portions.

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