Power mosfet devices with source embeddeb epitaxy and their fabrication methods

Abstract

The present invention discloses a power MOSFET device with embedded epitaxial source region and its fabrication method. The fabrication method comprises: growing an epitaxial layer on a silicon substrate and fabricating a trench gate structure; Inject into the upper part of the epitaxial layer to form a body region; Growing and forming source regions on a silicon platform through epitaxial growth process; Create a source contact and form an ohmic contact area at the bottom of the source contact; Complete the subsequent production process. In the present invention, the source region is formed by epitaxial growth, which raises the height of the source region and can control the depth of the source body region node, avoiding excessive depth of the source body region node, thereby improving the control of the threshold voltage distribution of short channel power MOSFET devices and increasing the mass production yield of low resistance power MOSFET devices.

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