Epitaxial layer deposition for semiconductor devices

Abstract

Methods of manufacturing semiconductor devices are described. The methods include etching a portion of a silicon layer of a transistor to form an opening adjacent to the silicon layer, the silicon layer extending between a source region and a drain region on a substrate; forming a p-type epitaxial liner layer in the opening and on the transistor in the source region and the drain region; an forming an n-type epitaxial gapfill layer on the p-type epitaxial liner layer to form a source and a drain.

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