Semiconductor device and method of manufacturing semiconductor device

Abstract

The present invention provides a semiconductor device comprising: a nanosheet stack having stacked a plurality of nanosheets made of semiconductor material; a gate electrode covering the entire circumference of each of the nanosheets with a gate insulating film in between; source / drain electrodes disposed on both sides of the nanosheet stack and commonly connected to the plurality of nanosheets; and an internal spacer sandwiched between the source / drain electrodes on both sides of the gate electrode and between the nanosheets, wherein the internal spacer extends to the outermost side of the nanosheets.

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