Vertical GAN moshemts with improved performance structures

Abstract

An integrated circuit comprises a vertical GaN MOSHEMT and a GaN super barrier rectifier (SBR) electrodes disposed in a gate trench of an unit cell. A first channel region of the GaN MOSHEMT is formed along a first sidewall of the gate trench while a second channel region of the GaN SBR is formed along a first portion of a second sidewall opposite to the first sidewall of the gate trench. A source metal connects with the heterojunctions, body regions of the GaN MOSHEMT and GaN SBR, and the gate electrode of the GaN SBR through a source contact trench, and further connects with a P-shield region below the gate trench through a grounded P region along a second portion of the second sidewall of the gate trench.

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