Semiconductor device, and method of manufacturing semiconductor device

Abstract

A semiconductor device includes: a third nanometer-sized transistor adjacent to a first nanometer-sized transistor; a non-element region deposited on the third nanometer-sized transistor and adjacent to a second nanometer-sized transistor; and a second insulating layer formed between the third nanometer-sized transistor and the non-element region, separating the third nanometer-sized transistor and the non-element region. The non-element region includes: a second gate electrode shared with the third nanometer-sized transistor; and at least one of a semiconductor layer connecting the source / drain regions.

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