Semiconductor device

Abstract

The present invention provides a semiconductor device capable of suppressing degradation of characteristics. A semiconductor device includes: a semiconductor substrate; a source region and a drain region located on an upper surface side of the semiconductor substrate so as to be spaced from each other; a body region located between the source region and the drain region; a drift region located between the body region and the drain region; a gate insulating film provided on the body region; a gate electrode provided on the gate insulating film; an insulating film provided on the drift region; a silicon oxynitride film provided on the insulating film; and a silicon nitride film provided on the silicon oxynitride film.

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