Semiconductor device and manufacturing method thereof

Abstract

Methods and structures for forming a source / drain feature having a V-shaped profile to effectively reduce source / drain contact resistance. In some embodiments, a semiconductor device includes a plurality of stacked nanostructures disposed over a substrate, a source / drain feature adjacent to the plurality of stacked nanostructures, and a source / drain contact feature disposed over the source / drain feature. In some embodiments, the source / drain feature has a substantially V-shaped profile along a top surface of the source / drain feature.

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