Semiconductor device with bottom insulating layer and method for fabricating the same

Abstract

The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate; an indentation inwardly positioned in the substrate; a bottom insulating layer including a lower portion conformally positioned along the indentation, and an upper portion conformally positioned on the lower portion and within the indentation; a first top insulating layer conformally positioned on the upper portion and within the indentation; and a first filling layer positioned on and surrounded by the first top insulating layer. A sidewall of the indentation is substantially vertical.

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