Memory device

Abstract

A memory device of embodiments includes a memory cell including a first conductive layer, a second conductive layer, a third conductive layer provided between the first conductive layer and the second conductive layer, a switching layer provided between the first conductive layer and the third conductive layer, and a variable resistance layer provided between the third conductive layer and the second conductive layer. The switching layer contains an oxide of zinc (Zn) and a compound of a first element and a second element, the first element being at least one element selected from a group consisting of zinc (Zn), tin (Sn), gallium (Ga), indium (In), and bismuth (Bi) and the second element being at least one element selected from a group consisting of tellurium (Te), sulfur (S), selenium (Se), and antimony (Sb).

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